隧穿场效应晶体管TFET以其高开关电流比和低亚阈值摆幅的低功耗特性正成为国际研究热点。针对目前纵向隧穿TFET器件存在的技术难点，经深入研究器件隧穿机理和泄漏电流的产生根源，本项目创新提出利用电场和应力场的多场集中结构来同时实现高开态电流与低泄露电流。研究工作围绕多场集中的理论建模、场集中结构优化以及器件实验验证三个方面展开。首先建立多场集中效应下隧穿几率增强理论模型和输运增强模型；然后开展器件关键结构参数优化设计，利用电场集中来加大隧穿几率并降低漏电隧穿几率，同时利用应力集中与电场集中一样的各向异性来提高隧穿后载流子迁移率并降低漏电输运，两种机理同时作用下以期获得最大程度的器件开关电流比提升和亚阈值摆幅的改善；并探索新结构外延材料生长、孔刻蚀和器件实验验证等关键工艺技术。该新结构器件的实现将为推动TFET器件在低功耗领域的应用提供新的理论方案和技术途径。

Tunnel Field-Effect Transistors (TFETs), which have high Ion/Ioff ratio and low subthreshold swing (ss) in theory, are becoming the research focus of international research field in recent years. However, the Ion/Ioff ration and subthreshold swing of TFET are far below their theoretical values. In this work, a novel low power Tunnel Field-Effect Transistor with enhanced Ion and suppressed Ioff based on electric field，stress field -- multi-field concentration effect is proposed. The goal of multi-field concentration TFET is aim at realizing higher Ion/Ioff ratio and lower subthreshold swing. This work will include the following three aspects: 1) Modeling of multi-field concentration mechanism, 2) Key structure optimization of concentration factor, and 3) device fabrication. First of all, the theoretical model of multi-field concentration enhanced tunneling probability and transportation will be established. Secondly, the key structure parameters of concentration factor will be optimized, and Ion will be enhanced by the accumulated electric field and stress during vertical tunneling and subsequent transportation，simutaniously Ioff will be reduced by the suppressed electric field and stress during lateral tunneling and subsequent transportation. This will lead to a significant improvement of Ion/Ioff ratio and subthreshold swing. Thirdly, some important technical technologies will be studied, including the epitaxial growth of field concentration structure and key fabrication processes of the device. The realization of the multi-field concentration TFET will promote the application of TFET device in low power area.