近年来，随着微电子、光电子器件逐步向微观尺度发展，微观界面的热传导问题已经日益成为热输运性质研究的焦点。然而，许多物理模型依旧存在争议，界面质量和检测方法有待提高，界面处声子的散射机制仍然需要更为深入的理论和实验研究。本项目主要关注GaAs基半导体微结构界面的热传导性质，在可控生长的高质量界面及其量子点、声子匹配层和二维电子气等微结构体系中，利用时域热反射谱等高精度的界面热传导性质检测方法，重点研究界面微结构的声子散射机制、“电子-声子”耦合作用和量子局域效应，并尝试通过外加电场等方式调控界面的热传导性质，建立界面热传导和热载流子散射机制的理论模型，探索界面的人工微结构、声子谱特性和电声子耦合对热传导特性的影响，分析宏观热输运现象所蕴含的微观动力学机制，为热界面材料、器件热管理中的关键科学与应用问题提供微观层面的理论解释和预测。

In recent years, as microelectronics and optoelectronics gradually evolved to microscale, the thermal conduction issues at the microscopic interface has increasingly become the focus of thermal transport researches. However, a lot of physical models remain controversial, the interface quality and the detection methods need to be improved, and the scattering mechanisms of phonons at the interface still requires more in-depth theoretical and experimental researches. This project focuses on the interface thermal conduction of GaAs-based semiconductor microstructures. In the high-quality interfaces with controlled growth methods, their thermal conductance will be measured by Time-Domain ThermoReflectance (TDTR). This study will focus on the phonon scattering mechanism, "electron-phonon" coupling and quantum localization effects. It intends to establish the theoretical models of interface thermal conduction, as well as the scattering mechanism of hot carriers. This project will explore the influence of interface microstructures, phonon spectrum and electron-phonon coupling on the interfacial thermal conductance (ITC) and attempt to modulate the ITC by means of external electric field. By summarizing the influence of different modulation methods on the ITC, the microscopic dynamics of phonons will be analyzed from the macroscopic thermal transport phenomenon. The mechanism provides a theoretical explanation and prediction at the micro level for key scientific and applied problems in thermal interfacial materials and thermal managements.