深紫外AlGaN发光器件具有无毒、环保、耗电低、使用寿命长和体积小等优点，在杀菌消毒和保密通讯等领域具有广阔的应用前景。然而，较低的光提取效率与内量子效率，严重制约了深紫外发光器件的发展与应用。. 本项目针对上述科学难题，基于分子束外延生长（MBE）技术，设计并调控AlGaN量子点的结构与分布，增强量子点阵列的超材料光学特性，通过提高深紫外光的透射率，进而提高光提取效率；通过在量子点中内嵌并调控超晶格结构，进一步增强其对载流子的量子限制效应，以提高内量子效率；结合数值仿真，深入探索调控AlGaN量子点（包含内嵌超晶格的量子点）的结构、分布与调控光提取效率及内量子效率的内在关联，并研究其物理机理，建立相应的理论模型。此项目的顺利开展，必将为未来深紫外发光器件的广泛应用提供可靠的理论依据和技术支持。

Deep-ultraviolet AlGaN light-emitting devices have the advantages of innocuity, environmental protection, low power consumption, long working life and small volume, etc. Therefore, they have broad application prospects in the fields of the sterilization and confidential communication, etc. However, due to the relatively low light extraction efficiency (LEE) and internal quantum efficiency (IQE), the development and applications of deep-ultraviolet light-emitting devices have been seriously limited. ..According to the above scientific problems, this project designs and modulates the structures and distributions of AlGaN quantum dots (QDs) by the technology of molecular beam epitaxy (MBE). By enhancing the metamaterial optical characteristics of QD arrays, as well as the transmissivity in deep-ultraviolet range, the LEE is able to be increased. Furthermore, by inserting the superlattice structure into QDs, as well as modulating the superlattice structure, the project can further enhance the quantum confinement effects on carriers, which could result in the enhanced IQE. Combined with numerical simulations, the project explores the intrinsic correlations between the modulations of the AlGaN QD structures and distributions (including QDs with embedded superlattices), and the modulations of LEE and IQE in detail. By studying the intrinsic physical mechanisms, the corresponding theoretical models can be established. The successful development of the project will provide the reliable theoretical basis and technical support for the wide applications of deep-ultraviolet light-emitting devices in the future.