CMOS毫米波相控阵芯片具有波束赋形和扫描的能力，可以显著提高无线系统作用距离和覆盖区域。加之CMOS工艺低成本的优势，其在5G通信、汽车防撞雷达和国防领域得到了广泛的研究。但是，CMOS毫米波移相器作为相控阵芯片的核心电路，必须面对CMOS工艺性能在毫米波频段严重下降的挑战。本项目拟研究CMOS毫米波移相器设计存在的三个关键科学问题：1、针对无源器件间电磁耦合引起的损耗及阻抗不平衡问题，探索建立毫米波宽带多器件多端口耦合模型；2、针对场效应管在毫米波频段由于严重的寄生效应引起的性能下降，研究场效应管版图对其毫米波频段的增益、线性度和效率的影响机理并建立宽带模型；3、针对毫米波移相器所使用的非理想片上器件和面临的严重的分布式效应，研究场-路结合的电路分析理论和设计方法。在此基础上，通过采用网络矢量合成的构架和基于传输线时延结构的移相单元实现高性能的CMOS毫米波移相器芯片。

The rapid development of the fifth-generation wireless communication (5G) and advanced driver assistance systems (ADAS) has led to enormous increase in the demand for mm-wave ICs, which are low-cost and have good performance. On the other hand, phase array can significantly increase the SNR and sensitivity of wireless communication system. Beam-forming capability makes itself suitable to broad applications such as mm-wave communications, radar, imaging and medical applications. However, designing mm-wave phased array by using CMOS technologies still faces many technical challenges, of which, phase shifter may be the most difficult block to design. This proposal aims to develop accurate passive and active devices models up to mm-wave regime, and design the high-performance phase shifter. With considering the complex EM environments, equivalent circuit models for passive devices will be developed. The transistor’s lumped models will also be proposed based on low frequencies BSIM core models with the help of EM simulators. As a result, transistors’ layout can be optimized according to different applications. The new design method, which will simultaneously consider circuit and EM field analysis, will also be developed. Based on accurate passive and active models, a high performance mm-wave phase shifter can be designed.