AlGaN基深紫外LED在净化水源和杀菌消毒等领域具有巨大的应用前景。传统深紫外LED存在p型掺杂和p型欧姆接触难的问题，电光转换效率普遍低于5%，无法满足实际应用需求。本项目拟将隧穿结集成到深紫外LED中以规避这一问题，有效提高器件电光转换效率。具体研究内容如下：1.研究p+-AlGaN/u-AlInGaN/n+-AlGaN隧穿结中隧穿几率的变化规律及调控方法，设计出高隧穿几率的隧穿结；2.研究隧穿结对深紫外LED发光效率的影响规律及改善途径，设计出高发光效率的深紫外LED结构；3.利用高温MOCVD研究隧穿结深紫外LED中缺陷、组分和掺杂的精细调控方法，获得高质量外延片；4.通过实验研究器件结构和晶体质量对隧穿结深紫外LED光电特性的影响，反馈理论设计和材料生长，获得高电光转换效率的隧穿结深紫外LED器件。本项目的实施将为高效深紫外LED的实现提供理论和技术支撑。

AlGaN-based deep ultraviolet light-emitting diode (DUV LED) have great prospect in water purification, sterilization and disinfection, etc. For the traditional DUV LED, however, p-type doping and ohmic contact are very difficult. As a result, the wall-plug efficiency (WPE) is generally lower than 5%, which cannot meet the demand of practical applications. In this project, a tunnel junction will be integrated into DUV LED to avoid this problem, which can effectively improve the WPE. The main contents of this study are as follows: First, for p+-AlGaN/u-AlInGaN/n+-AlGaN tunnel junction, the change rule and controlling methods of tunneling probability will be investigated to obtain high-tunneling-probability tunnel junction. Second, in order to achieve high efficiency DUV LED, effect of tunnel junction on the luminous efficiency of DUV LED as well as the improvement approaches will be investigated. Third, we will investigate the accurate controlling methods of defects, composition, and doping in the tunnel-junction DUV LED to get high-quality wafers. Fourth, effect of device structure and crystal quality on the photoelectric characteristics of the tunnel-junction DUV LED will be investigated. According to the results, the theoretical design and epitaxial growth will be further improved. Finally, tunnel-junction DUV LED with high WPE will be achieved. The implementation of this project will provide theoretical and technical support for the high-efficiency DUV LED.