传统RPP/IRPP模型的内在简单性导致其不能准确预测（甚至低估）纳米器件的在轨错误率，主要源于纳米器件的灵敏区尺寸与离子径迹大小可比拟、电荷共享效应严重、能损歧离增大等因素。因此，必须在纳米器件单粒子效应预计模型中考虑离子径迹和能损歧离物理过程。本项目使用蒙卡仿真计算和重离子试验相结合的方法，研究高能重离子径迹结构特性、单径迹中单灵敏区电荷区域收集和多灵敏区电荷共享机制、超薄灵敏区中的离子LET值不确定性，研究65 nm工艺SRAM中的重离子多位翻转表现形式、产生规律和内在机理，获得纳米级SRAM重离子单粒子翻转的物理机制，并在此基础上，通过对RPP/IRPP模型的修正，建立适用于纳米器件的重离子单粒子效应模型，通过地面重离子加速器试验对模型进行验证和优化，为纳米器件的在轨软错误率预计提供模型基础，为纳米器件的抗单粒子翻转加固设计提供机理基础，支撑和推动我国抗辐射加固纳米器件的航天应用。

Due to the fact that dimensions of sensitive volumes (SV) in nanometric devices are becoming comparable to the radius of ion track, charge sharing effect is becoming serious, and straggling of energy-loss is becoming significant, traditional RPP/IRPP model with inherent simplicity is inadequate for, or even underestimate the on-orbit soft error rate prediction of nanometric devices. Hence, physical processes including ion track and energy-loss straggling must be considered in the prediction model of single event effects in nanometric devices. This work studies the track structure characteristics of high-energy heavy ion, mechanisms of partial charge-collection of single SV and charge sharing of multiple SVs in a single ion track, and ion LET uncertainty in ultra-thin SV, by the method of combining Monte-Carlo simulation and heavy ion experiment. Moreover, manifestation, trend, and inner mechanisms of heavy ion induced multiple-bit upset in 65 nm SRAM will also be investigated. The objective of this work is to obtain the physical mechanisms of heavy ion single event upset in nanometric SRAM devices and further establish the single event effect model for nanometric devices by modifying the traditional RPP/IRPP model. The prediction model will be verified and optimized by earth-based accelerator testing. Results of this work will provide foundations for on-orbit soft error rate prediction and hardening design of nanometric devices, support and drive the space application of domestic radiation-hardened nanometric devices.