针对IGBT如何改善Von-Eoff折中关系、抑制snapback和实现反向导通关键问题，开展创新研究如下：①提出集成自适应NMOS管RC LIGBT新器件，研究实现低损耗和抑制snapback的新机理。通过NMOS管的自适应开与关来控制IGBT中载流子输运行为：正向导通，NMOS和寄生NPN管未激活，抑制snapback现象；关断过程，NMOS和寄生NPN管均开启，加速电子抽取，减小关断损耗；反向导通，寄生NPN管激活，提供反向电流路径；反向恢复，NMOS和寄生NPN管均开启，降低反向恢复电荷。新器件关断损耗和反向恢复电荷分别降低15%和50%；②建立非平衡载流子输运增强模型，据此研究载流子的输运行为，揭示自适应NMOS管降低损耗和抑制snapback的物理机制；③攻克局部SIMOX注入精准控制技术，研制样品并测试分析。本项目不明显增加芯片面积，为获得低损耗RC LIGBT提供新思路。

A low loss and snapback-free RC LIGBT with an integrated self-adaptive NMOS is proposed to address the key scientific issues of how to improve the trade-off relation of Von and Eoff, suppress the snapback effect and realize the reverse conducting. Firstly, the novel mechanism to achieve low loss and suppress snapback is investigated. The integrated NMOS influences the transport operation of carriers by its self-adaptive on/off. In the forward-state, the self-adaptive NMOS and parasitic NPN transistor are off and thus eliminates the snapback. At the turn-off stage, an inversion layer is formed in the NMOS, which provides a current path for the extraction of electrons and the turn-off loss (Eoff) is reduced. In the reverse conduction, the NPN is on, forming a reverse current path. During the reverse recovery, the NMOS and NPN are on and thus decreases the reverse recovery charges. By optimizing parameters of the device, the proposed device reduces the Eoff and Qrr by 15% and 50%, respectively. Secondly, the enhanced transportation model of Non-equilibrium carrier is derived. The model reveals the physical mechanism of carriers’ transport affected by the NMOS. Thirdly, the device is fabricated by the local SIMOX technology with precise injection control. Characteristics of the device are also measured. This project ushered in a new method to obtain a low loss and snapback-free RC LIGBT and has important value both in academic significations and in application potential.