空间X射线演化观测是研究星系和系外高能天体物理以及宇宙学关键问题的重要途径，为突破窄带隙Si基探测器在空间极端温度和高辐射环境下的应用困境，本项目基于宽带隙半导体SiC与GaN的耐辐照耐极端温度特性，提出研制SiC/GaN集成X射线探测系统。利用单晶制备SiC-PIN探测器，提高探测灵敏度；利用GaN-HEMT低噪声、大跨导和高输入阻抗优势，显著改善信噪比。特别是提出了基于插入介质层的金属键合互连方法，解决SiC-PIN与GaN-HEMT工艺集成和性能匹配问题。相较于分立器件，集成器件的杂散电容更小、噪声更低和能量分辨更佳。本项研究将建立起集成器件的PSPICE宏模型和X射线探测模型，开发出与之适配的低噪声读出电子学，制备出可应用于空间极端温度下的耐辐照高灵敏SiC/GaN集成X射线探测系统，满足半导体辐射探测技术的新需求，对提高我国空间X射线探测能力具有重大的科学研究意义和实用价值。

X-ray spectrum and flux variation are central to many key issues in Galactic and extragalactic high-energy astrophysics and cosmology. In order to break through the application predicament of narrow bandgap Si-based detectors in extreme temperature and high radiation environment, the SiC/GaN integrated X-ray detection system is proposed in this project, because the SiC and GaN wide band semiconductors have the virtue of high radiation resistance and adapting to extreme temperature. The SiC-PIN detector is fabricated using high quality SiC single crystal to improve detection sensitivity; the GaN-HEMT is used to significantly enchance signal-to-noise ratio for its low noise, big transconductance, and high input impedance characteristics. Especially, we propose a metal bonding method based on inserting dielectric layer, which could solve the possible problem in integration process and performance matching between SiC-PIN and GaN-HEMT. Compared with discrete devices, the integrated SiC-PIN/ GaN-HEMT device has smaller stray capacitance, lower noise and better energy resolution. In the course of this research, the PSPICE macro model and X-ray detection model of the integrated devices will be established, a low noise read-out circuit will be accomplished, and the high-sensitive SiC/GaN integrated X-ray detection system adapting to space environment with extreme temperature and high radiation dose will be fabricated. The new concept detector proposed in this project will meet the new requirements of semiconductor radiation detection technology. It is of great scientific significance and practical value to improve space X-ray detection capability of our nation.