由于制备方法和条件的不同，在金属氧化物半导体纳米材料表面会产生不同类型的氧缺陷，许多物理特性（发光、催化、气体传感等）都与其存在状态密切相关。如何表征、分析这些氧缺陷的存在状态，从而为其物理特性的分析提供重要理论依据成为一个亟待解决的科学问题。虽然，利用高分辨电镜可以观察氧缺陷的存在状态，但是技术上相当困难，而且需要很高的实验成本，因此利用拉曼光谱辨别金属氧化物半导体纳米材料中氧缺陷的存在状态成为一个值得探索的技术手段。本项目将以金属氧化物半导体纳米材料SnO2和TiO2为主要研究对象，利用拉曼散射技术，重点研究金属氧化物半导体纳米材料表面不同类型氧缺陷在拉曼谱中的表现特征，通过理论模拟与谱学分析相结合的方法深入挖掘其内在物理机制，从而探索拉曼散射作为金属氧化物半导体纳米材料表面氧缺陷类型表征的一种微区高效的光学检测手段，进而为寻求在器件设计、生物医疗、气体传感等领域中的应用提供理论依据。

The oxygen vacancies (OVs) in metal oxide nanomaterials play a crucial role in their physical characteristics such as photoluminescence, catalysis, gas sensing. Nanostructures with different OV types can be fabricated via preparation conditions changes. Many novel phonon characteristics are originated from their OV existence. The OV existing states can be widely used to analyse other physical characteristic origins. Therefore, how to characterize and analyse their OV existing states have become a crucial problem. In nanomaterials physics, the investigation to phonon characteristics of metal oxide nanomaterials with different OV types by Raman scattering have become a hot issues. In this project, several important metal-oxide semiconductor nanomaterials including tin oxide, titanium oxide are selected to disclose the effect of OV types on their phonon characteristics via Raman scattering technology, and explore their intrinsic physical mechanism from experimental and theoretical aspects. The general rule of OV appearance is summarized to deeply understand their physical mechanism, which has potential application in micro-area efficient optical measurement method for technical analysis in device design, biomedical, materials science, gas sensing aspects.