冶金法制备太阳能级硅产业化的关键问题是杂质硼（B）和磷（P）难以去除。在硅表面构建含氧多孔层，利用含氧多孔层中的诱生缺陷对B、P进行吸除是解决这一问题的有效途径。本项目拟以冶金级硅为研究对象，采用水热法在硅表面原位构建含氧多孔层。首先，研究酸、氧化剂和辅助剂种类、浓度、腐蚀温度、腐蚀时间等因素对硅表面含氧多孔层的影响规律，实现孔结构与氧含量的有效控制。其次，研究孔隙率、孔径大小和氧含量等对多孔层中诱生缺陷的类型、密度和尺寸等分布特征的影响规律，明确对诱生缺陷形成的调控手段。然后，研究含氧多孔层的缺陷吸附与B、P分布的内在关系，揭示缺陷对B、P的吸杂作用机理。最后，研究吸附B、P的缺陷与酸液或碱液作用的热力学行为，阐明B、P溶解去除的化学反应机理。通过以上研究，为硅材料加工过程中B、P的去除提供借鉴。

The key restrictive problem of industrializationin of solar grade silicon with metallurgical method is the difficulty of removing boron (B) and phosphorus (P). It is an effective way to solve the problem that the porous layer containing-oxygen is formed on Si surface, and B, P are removed by it’s induced defects. In the project, choosing the raw material of metallurgical grade silicon as the research object, porous layer containing-oxygen are constructed on the silicon surface in situ by hydrothermal method. Firstly, in order to control the pore structure and oxygen content, the effects of the type and concentration of acid and oxidant and auxiliary agent, the corrosion temperature and time on the formation of porous layer containing-oxygen on silicon surface are investigated. Secondly, the influence of pore structure and oxygen content on the distribution of induced defects in porous layer are investigated, in order to make clear the regulation methods of induced defects. Then, the intrinsic relationship between the defect adsorption and the distribution of B and P is studied to reveal the mechanism of gettering interaction between defects and B, P. Finally, the thermodynamic behavior of the adsorption of B and P with acid or alkali solution is studied, and the chemical reaction mechanism of B and P removal is clarified. Based on the above research, this paper will provides a new idea for the removal of B and P in the processing of silicon materials.