扫描隧道显微镜（STM）具有对单原子进行位置操纵的能力，是搭建原子级精确人工纳米结构最有力的工具之一。III-V族半导体砷化铟（InAs）在低电场下有极高的电子迁移率，是未来制造低功耗纳米光电器件的重要材料。本项目拟以STM原子操纵技术为主要手段，在InAs(111)A 和InAs(001)表面搭建接近真实器件的大规模原子级精确纳米结构，以及与有机分子相结合的具有存储、开关、转动等功能的复合纳米结构。并将在此基础上研究单分子器件的机理。此外还拟研究这些结构在不同温度、电场、磁场、光场下的物性变化和稳定性。我们最近已经成功利用这种技术在InAs表面搭建出了结构可调的量子点等人工纳米结构。本项目将在人工纳米结构的复杂化和功能化，及其物理机理的探索方面进行更深入的研究。研究成果将对相关器件的研发和应用提供重要物理基础。

When Moore’s law is approaching to its end, the research on the nanometer scale structures on semiconductor surfaces is of great importance for the future of microelectronics. Scanning tunneling microscope (STM) is one of the most powerful tools to perform the research because of its unique ability to manipulate and measure the single atoms. The III-V semiconductor Indium Arsenide (InAs) is an important material which needs to be studied, due to its high mobility of charge carriers at low electric field and thus high potential of being used in low power dissipation devices. Recently, we have made a progress in this field by constructing atomic precise reconfigurable Indium quantum dots on InAs(111) surface with STM. However, more detailed understanding about the functionality and the physics behind is still lacking. Therefore, we propose this project to construct more complex nano-structures that is close to the core of a real nano device, and composite nano-structures which combines the metal atoms and organic molecules with the function of data storage, switching or rotating. In addition, we are going to study the physics of these constructed nanostructures under thermo, electric, magnetic or optical fields. These results will be very helpful for the development and application of semiconductor nano-devices in the post-Moore era.