本项目针对突破硅基速度极限的器件机制这一核心科学问题，探索用室温Mott转变来实现高速、低功耗固态Mott场效应晶体管（Mott-FET）。室温下关联纳米结构的高速Mott转变能突破场效应晶体管节点尺寸与功耗限制，且操控室温Mott转变的微观行有望成为突破传统器件机制的途径之一。本项目拟通过构建科学机理-关键技术-器件构造研究链，围绕Mott转变与关联氧化钒纳米线结构的关系、场致Mott转变调控、Mott-FET原型器件构筑等关键问题，重点研究纳米线结构控制及其室温Mott转变特性，微结构对室温Mott转变的作用规律，场致Mott转变过程和栅极界面调控方法。通过研究场致Mott转变调控并构筑基于关联氧化物纳米线的Mott-FET器件，为实现高速场效应器件提供解决思路与可行方案。在低维材料、界面与器件方面都有丰富的研究积累和良好的实验平台，为项目顺利实施提供了有利的前提条件和技术支持。

This proposal focus on the key point: to break through the mechanism limitation of classical silicon-based devices, and then attempt to use room-temperature Mott transition for designing and achieving Mott-FET. Manipulating room-temperature Mott transition can breakdown the size limitation and bottleneck for classical field-effect transistors (FET) and also realize Mott-FET devices. But it is still challenging to understand and then control Mott transition behaviors for solid Mott devices, which is also alternative way for extending device mechanisms of silicon-based transistors. This proposal focuses on Mott-transition materials and field-effect transistors (Mott-FET) at room temperature for realizing novel FET at nanoscale by an investigation chain of scientific mechanism-key techniques-device fabrication. Then, we will solve the key scientific issues including the relationship between Mott-transition and correlated vanadium oxide nanowires, the manipulation on field-induced Mott-transition and the fabrication and control of Mott-FET devices. Some important aspects will be studied as followed: the structure control and room-temperature Mott transition of correlated vanadium oxide nanowires, the role of microstructures in Mott transition, and the method for adjusting field-induced Mott-transition and gate interface. The projects will help us investigate the alternative way to achieve Mott-FET at room temperature, and break through the mechanism limitation of classical silicon-based devices. The proposal is based on some important progresses on nanomaterials, interface control, functional devices, and advanced scientific equipment.