针对表面等离子体光刻分辨力提升受限问题，并结合纳米技术研究领域对新型纳米制备与加工技术的重大需求，本项目创新性的提出将自对准图形技术引入表面等离子体光刻以实现7nm分辨力图形结构加工的研究思路。通过解决：高效激发结构的设计及制备方法，超薄（<15nm）、低损耗的超衍射材料的制备工艺；超高分辨力、低线边缘粗糙度的紫外感光材料的合成；高陡度、高保真度的深刻蚀工艺这三个关键技术问题，得到28nm分辨力的高质量、高陡度、高特征尺寸（CD）均匀性的初始图形，再引入四重自对准图形技术，实现7nm分辨力的结构制造。通过本项目的实施，将进一步推进我国在表面等离子体超衍射光刻技术和应用方面的发展，形成一套超高分辨力的纳米结构制造的新方法。

Aiming to the promotion limited resolution of surface plasmon lithography, and combined with the nanoresearch field significant demand for new nanofabrication technique, this innovative projects put forward a new ideal to obtain sub-10nm patterns by introduce self-aligned pattering technique to surface plasmon lithography. This project will mainly breakthrough in three key technologies: First, design and fabrication of the excitation structures with more efficiently, manufacture ultra-thin (<15nm) and low-loss metamaterials; Second, synthesis the UV photosensitive material with ultra-high resolution and low-line edge roughness; Third, high aspect ratio, high-fidelity plasma etching process. Then we can the 28nm half-pitch core patterns with high quality, high aspect ratio and high CD uniformity, and by introduction of quadruple self-aligned pattern technology to achieve 7nm node structure manufacturing. By implementation of this project, will further promote the development of sub-diffraction limited lithography technology and application in our country, and will form a new way to manufacture ultra-high resolution nanostructures.