针对传统半导体氢气传感器工作温度高、选择性差和室温响应恢复慢等问题，本项目拟从掺杂调控表面缺陷和界面结构优化两方面出发，进行掺杂氧化钼纳米线及其复合材料室温氢敏性能的优化与机理研究。首先，研究Fe掺杂氧化钼纳米带及其硫化钼复合材料的可控制备技术；其次，通过理论计算分析Fe掺杂及其浓度对纳米带电子结构、表面氧/氢吸附行为的影响，并从实验上研究Fe掺杂及其浓度对纳米带氢敏性能的影响规律，探索Fe掺杂与室温氢敏性能的关联性；第三，通过Fe掺杂纳米线与硫化钼的复合改变敏感层界面结构，探索氢和氧在复合材料表面、界面处的吸附、扩散、反应和脱附行为，构建室温氢敏响应动力学模型，揭示界面调控对半导体纳米材料室温氢敏性能的优化机制，获得快速、灵敏且选择性优异的气体敏感元件。项目的顺利实施对氢气传感器的发展与应用具有重要理论和实际意义，有望推动我国自主知识产权氢气传感器的进步和氢能相关领域的安全发展。

Due to the high working temperature, poor selectivity, and slowly room-temperature response/recovery speed for the traditional semiconductor based hydrogen sensor, this proposal intends to improve the hydrogen sensing performance and study the sensing mechanism of modified MoO3 nanoribbons and their composite with the methods of doping with Fe elements and optimizing the junction structure. Firstly, we study the controllable synthesis of Fe-doped MoO3 nanoribbons and their composite with layered MoS2. Then the effect of the type of Fe elements and their concentrations on the electronic structure of the nanoribbons and absorbed behavior of oxygen/hydrogen on the nanribbon surface is explored through the theoretical calculation and. The gas sensing of the Fe-doped MoO3 nanroribbons will be also studied in experiments. Based on these, the relationship among the Fe elements, their concentrations, and the gas sensing performance will be analyzed. Thirdly, the Fe-doped MoO3 nanoribbons will be composited with layered MoS2 to modify the junction structure in the sensing layer. The adsorption, diffusion, reaction, and desorption behavior of oxygen/hydrogen gas at the material surface and junction interfaces in the composite will be investigated to build the kinetic model of the room-temperature hydrogen sensing behavior. Finally, the optimization mechanism of hydrogen sensing through modifying the junction interface will be revealed. Moreover, a fast, highly-sensitive, and selective room-temperature gas sensing element will be obtained. The smooth implementation of this proposal will provide theoretical and experimental basis for the research and development of hydrogen gas sensor systems and will promote the improvement in the hydrogen sensor with independent intellectual property right and the development of related fields in hydrogen.