六角氮化硼封装石墨烯器件的电子迁移率达到历史新高，且只受限于声子散射，为进一步提高电子迁移率引领未来电子器件发展，则必须研究清楚其中声子散射机制。其中石墨烯-hBN二维范德瓦尔斯异质结形成摩尔图案，其声子将对电子散射起主要作用。同时，此摩尔图案具有特殊声子谱，可望实现声子输运振荡和Fano共振等物理新效应。因此，具有摩尔图案的石墨烯-hBN异质结声子输运振荡和Fano共振是一个亟待解决的重要科学问题。因此，本项目拟采用晶格动力学和连续化模型计算其声子，研究带隙的摩尔图案周期调控和声子过滤；用拉曼光谱检验其声子；利用声子-声子散射，研究声子输运振荡和Fano共振；由声子-电子散射，探讨热电性能增强和电子遂穿机制；制作微纳器件和双栅场效应管分别研究热电势和微分电导。以上研究将揭示此异质结中声子带隙调控机制、声子过滤及其输运振荡和Fano共振的原理；同时为其热电性能和场效应管性能的改善提供指导。

The room-temperature mobility of graphene device sealed with two pieces of hBN reached the highest value in history, which is only limited by the phonon scattering. In order to enhance the mobility to lead the development of future device applications, the phonon scatting mechanics in the device should be revealed at first. The graphene-hBN hetero-structure forms Moiré pattern among the device. Its phonon scattering induced by Moiré pattern will play a crucial role in electronic device performance. Meanwhile, the Moiré pattern owns the peculiar phonon band structure in the graphene-hBN hetero-structure, thus we can implement phonon transport oscillation and Fano resonance. Therefore, it is a significantly scientific problem to study urgently phonon transport oscillation and Fano resonance in graphene-hBN with Moiré pattern. Based on these presented above, we proposal to carry out studies as follows..(1) By use of the lattice dynamics and the continuum model, we calculate its phonons, and then to study phonon spectrum, phonon filter and phonon gap manipulated by wave length of Moiré pattern. At the same time, we detect its Raman spectrum for verifying its phonon..(2) By use of phonon-phonon scattering law, we study the manipulation of phonon transport by wave length of Moiré pattern, phonon transport oscillation and Fano resonance..(3) From phonon-electron scattering law, we can study the effect of phonon on thermoelectric properties enhancement and the mechanics of electron tunneling. And we can study thermopower and the differential electronic conductance by fabricating the nano-device and the field electric transistor with double-side gates..These three studies above can indicate the mechanics of the phonon transport manipulated by Moiré pattern, phonon transport oscillation and Fano resonance. At the same time, these studies can provide the experimental basis and reference to its thermoelectric enhancement and the performance of field electric transistor.