柔性电子技术作为一场全新的电子技术革命，是当今最令人激动和最有前景的信息技术之一，受到学术界和工业界的广泛关注。然而，如何在柔性衬底上制备出具有优良结晶性的氧化物电子薄膜仍旧是一个亟待解决的难题。本项目拟以Ba(SnxTi1-x)O3 (BTS)基薄膜材料为研究对象，对高品质柔性BTS基结晶薄膜的制备及其介电可调特性展开研究。采用磁控溅射技术和光子烧结技术在PC衬底上制备柔性BTS基结晶薄膜，深入探讨柔性BTS基结晶薄膜的结晶及晶粒生长特性，并通过化学键计算探索调谐和损耗机制，进而确定生长取向与介电可调性能的关联机制。通过实现柔性BTS基结晶薄膜的晶向可控生长，提升薄膜的介电可调性能。结合多层薄膜的界面工程技术，进一步优化柔性BTS基结晶薄膜的介电可调性能。本研究有望解决在柔性衬底上对介电氧化物薄膜的结晶化技术难题，带来原创性的突破，有效促进柔性电子技术的发展。

As a new revolution of electronic technology, flexible electronic technology is one of the most exciting and promising information technologies, and has received a great deal of attention in academic and industrial circles. However, how to deposit functional oxide thin films with good crystallization on flexible substrates is the urgent problem to be solved. In this project, the preparation and dielectric tunable properties of high quality flexible Ba(SnxTi1-x)O3 (BTS) based crystal thin films will be investigated. Magnetron sputtering and photonic sintering techniques will be adopted to prepare the flexible BTS based crystal thin films on PC substrates. The crystal structure and grain growth characteristics of flexible BTS based crystal thin films will be deeply discussed, the mechanisms of tunability and loss will be explored by the calculation of chemical bond, and then the correlation between growth orientation and dielectric tunable properties will be determined. The dielectric tunable properties will be improved through controlling crystal orientation growth of flexible BTS based thin films, and further improved via interface engineering. The implementation of this project is expected to solve the crystal problem for the dielectric oxide thin films prepared on flexible substrates, brings the original breakthrough, and effectively promotes the development of flexible electronic technology.