基于氮化镓（GaN）出色的材料特性，GaN基毫米波器件开始扩展到移动通信、雷达探测等领域。随着毫米波器件尺寸的缩小，短沟道效应制约平面器件达到栅长极限，因此Fin-HEMT成为GaN基毫米波器件的发展方向。本项目研究点主要集中于实现多沟道InAlGaN/GaN高线性增强型Fin-HEMT毫米波器件，以解决目前GaN基Fin-HEMT器件高频、高阈值、高线性度难以兼容的技术难题。本项目包括两个主要研究内容：一是通过材料与器件仿真研究，得到高频、高阈值、高线性度Fin-HEMT器件参数优值，通过理论分析与数值计算分别建立阈值电压调控模型与线性度调制模型指导器件设计；二是通过器件关键工艺研究，开发出硅掺杂纳米孔一体化低欧姆接触电阻技术、N2O等离子体原位氧化刻蚀技术与中性粒子刻蚀形成浮空T型栅技术等器件关键技术，并探究各技术中所涉及的物理机理。希望通过本项目的研究，可以推动国家毫米波技术的发展。

Owing to the excellent material properties of GaN, GaN based millimeter-wave devices have begun to expand to mobile communication, radar detection and other fields. With the size reduction of millimeter-wave device, short channel effects restrict planar devices to reach the gate length limit, so Fin-HEMTs has become the development direction of GaN based millimeter-wave devices. The research is mainly focused on the realization of multi-channel InAlGaN/GaN high linearity enhancement-mode Fin-HEMT millimeter wave devices to solve the technical problems of GaN-based Fin-HEMT devices, which is difficult to be compatible with high frequency, high threshold voltage and high linearity. The research includes two main contents: Firstly, through the simulation of materials and devices, the optimal parameters of high frequency, high threshold and high linearity fin HEMT devices are obtained. And through theoretical analysis and numerical calculation, the threshold voltage regulation model and high linearity modulation model are established to guide device design. Secondly, through the research of critical fabrication process of devices, the key technologies of devices such as low ohmic contact resistance technology of silicon doping combined with nanopore，in-situ oxidation and etching technology of N2O plasma, and floating T-gate technology etched by neutral particles are developed, and the physical mechanisms involved in each technology are explored. It is hoped that the research can promote the development of national millimeter wave technology.