InGaAs/InP基异质结双极型晶体管（HBT）广泛应用于超高速数字电路以及光纤通信系统当中，深入研究InP基HBT的退化机理，对于提高器件可靠性，实现器件实用化至关重要。低频噪声以其高灵敏度、无损、低成本的优点，成为器件退化机理和可靠性评估的重要手段。本项目通过测试与分析器件低频噪声频谱，研究其中各噪声分量与器件表征参数的相关性，研究缺陷行为和噪声灵敏度的相关性，揭示缺陷引起器件退化的微观机制；通过1/f噪声频谱的分析，结合器件的能带结构，揭示InGaAs/InP HBT基区载流子的输运过程，最终实现对器件退化机理的理解，进一步提高InP基HBT器件的可靠性。

InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) have been designed for increased bandwidth digital circuits and fiber-optical communication system. In order to improve InP HBT's reliability and achieve commercial level, we have to intensively study the degeneration mechanism of the device. Low frequency noise analysis is a significant method for the research of device's degeneration mechanism and the evaluation of device's reliability. It has the advantage of low cost, high sensitivity and no damage. In this research, we arranged to test and analysis the device's low frequency noise spectrum and study the dependence between the device's characterization parameters and each noise components. And the correlation between device's defect behavior and the sensitivity of noise has been studied. Reveal the micro mechanism of device's degeneration due to the defects. And study the base current carrier transport base on the analysis of 1/f noise spectrum. Finally achieve the comprehension of device's degeneration mechanism, and improve the reliability of InP HBTs.