硅基微纳光子结构中的高非线性光学效应及应用基础研究

基于绝缘体上硅结构（SOI）的光子器件以其高集成度、低损耗、高速率，被认为是构建集成光子芯片的理想平台。将新型高非线性材料融入传统SOI工艺，可望更好地利用已有微电子加工技术实现多种新型硅基光子器件，增强非线性的响应强度，提高器件响应速率，实现多种非线性应用。本课题拟将硅基光子结构与高非线性材料石墨烯相结合，以增强器件的非线性效应，主要思想是利用硅基横向狭缝波导结构和石墨烯的表面等离子体效应压缩模场面积，同时利用石墨烯的高非线性系数，在硅基上实现较强非线性效应，完成光参量放大等功能。该方案具有模场面积小、集成度高、响应速率快、便于与微电子进行混合集成等优点，在此基础上可望实现全光信号处理、量子纠缠产生和超连续谱信号等非线性的应用，对通信、生命医学、航空航天、量子等方面带来影响。

Silicon on insulator is considered to be an ideal platform for nano photonic devices due to its advantages such as high density, low loss, and high speed. By incorporating highly nonlinear materials into SOI structures, it is expected to realize novel photonic devices to improve the nonlinear response, increase the speed, and achieve many applications. This project will combine highly nonlinear graphene material with silicon photonic structure to enhance the nonlinear effects. The proposal is to utilize horizontal slot structure on silicon together with surface plasmon effect to compress the mode area of the light, while taking advantage of the high nonlinearity of graphene itself. Nonlinear processing such as parametric amplification can be expected. This scheme features ultra-small mode area, high density, ultrafast response, and easy to be integrated with electronics. Such a device could be used in optical signal processing, quantum entanglement, and supercontinuum generation for communications, bio-science, aerospace, and quantum science.