随着摩尔定律逐渐逼近其物理极限，将微电子和光电子结合起来的硅基大规模光电子集成已成为业界的普遍共识，有望给信息技术带来突破性进展。CMOS可兼容的硅基激光光源是硅基光电子集成的最大难题。在硅基、锗基上生长直接带隙III-V族材料被认为是解决该难题最具前景的方法之一。申请人作为主要贡献人在世界上首次实现了锗基、硅基III-V族InAs/GaAs量子点激光器的室温连续激射。然而目前硅、锗和III-V族光电器件的主流技术都基于硅光工艺不兼容的特殊衬底制备条件下，不利于硅光集成。申请人回国后，利用所在团队特殊设计的IV族和III-V族MBE联合系统，通过巧妙设计实现了在普通Si（001）和SOI衬底上的III-V族量子点激光器的异质外延。本项目拟通过SOI基槽内嵌入式混合生长技术，实现SOI基高效发光的InAs量子点激光器的制备与SOI基硅光波导的耦合集成，解决硅基光源与波导单片集成的重大瓶颈。

As the physical limitation of Moore’s law is approaching, the scientists come with a common agreement that silicon integrated photonics will take the breakthrough over the current obstacles. The increasingly urgent market demand for developing cost effective and reliable light sources on Si substrates for silicon photonic integration has opened new challenges for quantum dot (QD) lasers, due to the indirect bandgap of group IV materials (Si and Ge). Current advances in III-V QD lasers monolithically grown on Si and Ge demonstrate great potential for.practical applications and their future (firstly reported by applicant’s group in the world) in silicon photonics appears extremely bright. But most of the current techniques are based on special prepared Si substrate with complicated buffer structures. The applicant here by using a specially designed IV/III-V hybrid MBE system, can achieve InAs QD lasers on standard Si (001) and SOI substrate by using (111)-faceted Si sawtooth structure. This project proposes to investigate the material growth and device fabrication of embedded InAs/GaAs QD lasers on SOI substrates, following by butt coupling with SOI based Si waveguides.