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氢诱导MgB2自生氢化物提高临界电流密度的机理研究
结题报告
批准号:
51804195
项目类别:
青年科学基金项目
资助金额:
25.0 万元
负责人:
蔡奇
依托单位:
学科分类:
E0413.粉末冶金与粉体工程
结题年份:
2021
批准年份:
2018
项目状态:
已结题
项目参与者:
陈莹莹、刘蔚、林羲、马柯、徐文灿、郭彦霖
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中文摘要
MgB2的转变温度高,制备成本低,通过化学掺杂引入杂质相钉扎中心提高其临界电流密度水平,可使其满足在低磁场下磁共振成像领域的应用。然而,固相掺杂面临着过量掺杂剂聚集在晶粒间阻碍电流传输的问题。预实验结果表明,在氢气气氛下烧结MgB2,氢诱导MgB2晶粒中析出了氢化物Mg(BH4)2,同时过量的氢气可从材料中逸出,实现了“纯净”掺杂和高磁场下临界电流密度的初步提高。因此,本项目围绕“气体掺杂”的理念,利用Mg、B和MgB2的储氢行为,发展氢掺杂MgB2的制备技术。在分析氢化物形成的热力学条件及氢气气氛下MgB2成相的动力学机制的基础上,依靠氢压调控氢化物/MgB2复合组织,获得纳米级氢化物弥散分布在MgB2晶粒中的有利组织,制备高临界电流密度的氢掺杂MgB2材料,并澄清氢化物作为钉扎中心的机理。项目的实施对推进MgB2材料在高磁场下应用具有重要意义,也为超导材料的设计提供科学依据。
英文摘要
MgB2 with high transition temperature and low preparation cost is mainly used in the low-field magnetic resonance imaging. As a candidate to replace the conventional low-temperature superconductors for low refrigeration cost, chemical doping is commonly employed to introduce impurities as pinning centers and to improve the critical current density. However, excess dopants normally aggregate at the grain boundaries to obstruct the current transmission in the case of solid-state doping. Preliminary experiments have shown that Mg(BH4)2 hydrides were induced to precipitate within MgB2 grains when the samples were sintered in H2 atmosphere, and excess H2 could escape from the sample to realize “clean” doping and the enhancement of critical current density. In this regard, the pinning mechanism and the effect of hydrides on the critical current density are required to be investigated. Hence, the concept of gas doping is used in this project. Considering the hydrogen storage behavior of Mg, B, and MgB2, hydrogen is employed to dope MgB2 by in situ or ex situ synthesis techniques. Based on the thermodynamic and kinetics analyses, the formation mechanism of MgB2 and hydrides is investigated, and the complex structure of hydrides/MgB2 is regulated by tuning the H2 pressure. The ideal H-doped MgB2 superconductors contain nanoscale hydrides that finely dispersed in the MgB2 matrix, and the critical current density is expected to be enhanced, due to the flux pinning effects of these hydrides. The fabrication of high-performance H-doped MgB2 superconductors is conducive to the high-field application of MgB2. The relationship among H2 condition, microstructure, and superconducting properties could provide guidance for the design of superconducting materials.
MgB2的转变温度高,制备成本低,通过化学掺杂引入杂质相钉扎中心提高其临界电流密度水平,可使其满足在低磁场下磁共振成像领域的应用。然而,固相掺杂面临着过量掺杂剂聚集在晶粒间阻碍电流传输的问题。本项目围绕“气体掺杂”的理念,利用Mg、B和MgB2的储氢行为,发展原位和先位的氢掺杂MgB2的制备技术,分别为氢气气氛下球磨的B粉与Mg粉原位合成,以及在氢气气氛下烧结预合成的MgB2,通过氢诱导MgB2晶粒中析出了氢化物Mg(BH4)2,同时过量的氢气可从材料中逸出,实现了“纯净”掺杂和高磁场下临界电流密度的提高。项目揭示了氢气气氛下MgB2的相形成机理,确定了烧结过程中的物相演变及反应路径,在分析氢化物形成的热力学条件及氢气气氛下MgB2成相的动力学机制的基础上,依靠氢压、吸氢温度和吸/放氢过程调控,获得纳米级氢化物弥散分布在MgB2晶粒中的有利组织,完成了氢化物/MgB2复合组织的调控及MgB2的性能优化,制备了高临界电流密度的氢掺杂MgB2材料,在20 K和3 T下临界电流密度值达到1.8×10^4 A·cm^-2,进一步阐明了氢化物提高临界电流密度的机理为成分波动引起的钉扎效应和面钉扎效应。项目的实施对推进MgB2材料在高磁场下应用具有重要意义,也为超导材料的设计提供科学依据。
期刊论文列表
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专利列表
DOI:10.1007/s10854-020-04862-x
发表时间:2020-11
期刊:Journal of Materials Science: Materials in Electronics
影响因子:--
作者:Cai Qi;Li Xinyao;Li Shukui;He Chuan;Liu Xingwei;Feng Xinya
通讯作者:Feng Xinya
DOI:10.3390/ma13214957
发表时间:2020-11-04
期刊:Materials (Basel, Switzerland)
影响因子:--
作者:Cai Q;Li X;Li S;He C;Liu X;Feng X
通讯作者:Feng X
Enhancement of critical current density by borohydride pinning in H-doped MgB2 bulks
H 掺杂 MgB2 块体中硼氢化物钉扎提高临界电流密度
DOI:10.1063/1.5064498
发表时间:2019-03
期刊:Journal of Applied Physics
影响因子:3.2
作者:Cai Qi;Zhang Tong-Yi;Zhao Qian;Zhang Zhiwei;Liu Yongchang;Li Qian
通讯作者:Li Qian
Formation of diverse B2+O structure and hardness of Mo-modified Ti-22Al-25Nb alloys upon cooling
Mo变质Ti-22Al-25Nb合金冷却时不同B2O结构的形成和硬度
DOI:10.1016/j.vacuum.2019.04.034
发表时间:2019-07
期刊:Vacuum
影响因子:4
作者:Zhang Yaran;Cai Qi;Liu Yongchang
通讯作者:Liu Yongchang
Solution treatment for enhanced hardness in Mo-modified Ti2AlNb-based alloys
固溶处理提高 Mo 改性 Ti2AlNb 基合金的硬度
DOI:10.1016/j.jallcom.2019.07.149
发表时间:2019-10
期刊:Journal of Alloys and Compounds
影响因子:6.2
作者:Zhang Yaran;Cai Qi;Ma Zongqing;Li Chong;Yu Liming;Liu Yongchang
通讯作者:Liu Yongchang
基于双重氢化物辅助烧结的钛合金的组织调控和力学行为研究
  • 批准号:
    --
  • 项目类别:
    面上项目
  • 资助金额:
    58万元
  • 批准年份:
    2021
  • 负责人:
    蔡奇
  • 依托单位:
国内基金
海外基金