限制高效Cu(In,Ga)2Se2光伏器件性能的微观机制的低温测试分析与模拟研究

CIGS薄膜太阳电池进入高效（稳定转换效率>15%)阶段后，其微观机制成为制约性能提升的瓶颈。针对目前电池填充因子、开路电压低的问题，本项目拟结合两种特色方法：一.低温测试分析技术（低温hall、低温PL谱、低温I-V）；二.新版专业仿真软件wxAMPS。以关键的Cu元素为主线，深入研究CIGS电池的缺陷态分布、界面遂穿机制，建立更确切的载流子输运模型，找出制约电池并联电阻、填充因子、开路电压的关键科学问题。主要内容包括：1）探索Cu元素在三步法中的反应机理；2）总结Cu含量对缺陷态的影响及亚稳态的形成机制； 3) 总结表面贫Cu结构的界面遂穿机制、界面复合路径。4）优化工艺，改善缺陷态分布、表面Cu元素分布结构，稳定器件性能，提升电池输出特性。本项目的开展将加深CIGS电池的基础研究，解决影响电池高效的关键科学问题，也为其他薄膜太阳电池的研究提供更深入的测试和仿真技术。

The micro-mechanism becomes the bottleneck problem of performance improvement，when stable efficiency of CIGS thin film solar cell became above 15%. In view of the current lower fill factor and open circuit, this project intends to combine two Characteristic methods: low-temperature test technology (low-temperature hall, PL and I – V), professional simulation software wxAMPS. With key Cu element as the main clue, the defects distribution and interface tunneling mechanism will be further studied, and the more precise carrier transport model will be established, and explore the key science problem decreasing of the shunt resistance, open circuit voltage and fill factor. include: 1) the reaction mechanism of Cu element in three-step process; 2) defects distribution in different-content CIGS cells and formation mechanism of metastable characteristic; 3) interface tunneling mechanism and the interface of combination path in CIGS device of Cu-poor surface. 4) process optimization , improvement of defects and surface Cu distribution in order to stabilize and improve output characteristics of the device. The development of this project will not only enhance the understanding the basic research of CIGS solar cell, solve the key scientific problems，but also provide further testing and simulation methods for other thin film solar cell research.