二维材料的研究热潮兴起于2004年石墨烯的成功制备，其丰富多彩的电子态和物理效应为构筑新型的电子器件提供了新机遇。近几年间，与碳同族的硅烯、锗烯、锡烯，邻族的硼烯、磷烯等单元素烯陆续在实验室外延生长成功，而邻族的其它单元素烯（如：镓烯等）的外延生长与研究至今鲜有报道，有待进一步研究。本项目将围绕这个问题，拟在超高真空环境下，通过不断改变样品生长条件（如温度、覆盖度等）在半导体Si(111)表面上外延生长出“镓烯”，结合超高真空低温扫描隧道显微镜和第一原理计算方法，研究镓烯在Si(111)衬底上的生长过程，表征镓烯的几何结构，揭示镓烯的电子结构和能带结构。藉此探究镓烯在Si(111)表面的生长动力学行为，及其拓扑绝缘性、超导性等物理特性。本项目的实施可推动“镓烯”这一新型材料的发展，对我国的二维材料、微电子器件等领域有重大意义。

The rise of 2D materials began in 2004 with graphene. Its abundant electronic states and physical effects provide new opportunities for the manufacture of new electronic devices. In recent years, many analogues of graphene composed of a single element have been prepared successfully, such as the silicene, germanene, and stanene composed of carbon group elements, and the borophene, phosphorene composed of the elements locating at the neighboring columns of carbon in the periodic table. While, there are few reports on the analogues of graphene composed of other elements, such as gallium, which needs further study. This project will focus on this problem. Gallenene will be epitaxially grown on the Si(111) surface by changing the growth conditions (such as temperature and coverage) in the ultra-high vacuum environment. By the low temperature scanning tunneling microscopy and the first principles calculation, the growth process of gallenene on Si(111) will be studied, and the electronic structure and the band structure of gallenene will be revealed. By this, the growth kinetics of gallenene grown on Si(111) and its physical properties (such as topological insulation and superconductivity) will be investigated. The implementation of this project can promote the development of "gallenene", a new material, and has great significance in the fields of two dimensional materials and microelectronic devices in China.