本项目提出将二维磁性材料与铁电（多铁）材料相结合的新构想，即采用分子束外延技术、机械剥离、转移和微纳加工技术，在高质量的PMN-PT铁电单晶和BiFeO3多铁性薄膜上制备以范德华力结合的二维磁性薄膜、单/少层二维磁性单晶，构建“二维磁性薄膜(单晶)/铁电(多铁)”异质结构。采用扫描探针显微技术、铁磁共振技术、磁光克尔技术以及反常霍尔效应测量技术，研究多场（电场、磁场、光照、温度）调控下铁电和多铁层的极化电荷、铁弹应变、铁电畴翻转以及界面的磁交换偏置对二维磁性薄膜(单晶)的居里温度、矫顽力、饱和磁化强度、磁畴结构、磁各向异性、载流子浓度等电磁性能的调控规律，揭示异质结构中磁－畴－电的耦合机制，设计并构建基于二维磁性材料和铁电（多铁）材料的低功耗、非易失存储原型器件，实现室温下二维磁性薄膜电磁性能的非易失电场调控，为二维磁性材料的应用提供物理基础和技术储备，同时也丰富多铁性异质结的研究内涵。

In this project, we propose a new idea of the combination of two-dimensional ferromagnetic materials with ferroelectric and multiferroic materials. Namely, using the molecular beam epitaxy technology and the mechanical stripping, transfer and micro-nano processing technology, we are going to prepare van der Waals force combined two-dimensional magnetic materials thin films and single/few layer two-dimensional magnetic crystals on high quality PMN-PT ferroelectric single crystals and BiFeO3 multiferroic thin films to construct "two-dimensional magnetic film (single crystal)/ferroelectrics (multiferroics)" heterostructures. Under multiple fields (electric fields, magnetic fields, light illumination, temperature) conditions, using the scanning probe microscopy, ferromagnetic resonance technology, magneto-optic Kerr measurement technology and the anomalous hall effect measurement technology, we are going to study the effects of ferroelectric polarization charge, ferroelastic strains, and rotation of ferroelectric domains of the ferroelectric and multiferroic layers and the interfacial exchange bias on the regulation law of the Curie temperature, coercive field, saturation magnetization, magnetic domain structure, magnetic anisotropy, and carrier concentration, and to reveal the interfacial coupling mechanisms among the magnetism, ferroelectric domain, and electric field, and to design and build prototype low-power consumption and non-volatile storage devices based on two-dimensional magnetic materials and ferroelectric (multiferroic) materials, and to realize non-volatile electric-field regulation of the electrical and magnetic properties of two-dimensional magnetic film at room temperature, and thus provide the physical basis and technical reserve for the applications of two-dimensional magnetic materials, and expand the research content of multiferroic heterostructures as well.