CuNi44埋入电阻是实现电子元器件集成化与模块化的重要方法。其中，CuNi44合金沉积过程中镍的可控析出是保证元器件封装性能的关键。本项目拟将DFT与电化学方法相结合，研究有机金属配合物构型对CuNi44合金可控析出的微观动力学和电子转移过程的影响规律；从分子角度定量分析强Cu(II) 弱Ni(II)型配合物的轨道特征，建立配体的筛选模型；设计新型、高效的络合体系，并采用电沉积方法验证其对镍定量可控析出的效果，以期获得镍含量在44±2 wt%的CuNi44埋入电阻封装新材料。本项目可以全面揭示合金可控析出的本质行为，并为工艺改进提供理论依据，避免了仅仅依靠经验进行配合物筛选的缺陷，具有重要的理论意义和实际价值。

CuNi44 embedded resistor is major method for realizing electronic component integration and modular. Among, Ni Quantitative control is important for packaging during CuNi44 alloy deposition. In this project, the kinetic characteristics and electron migrate bahavior of CuNi44 deposition are studied by DFT and electrochemical methods. The structure and molecular orbital characteristic of strong Cu(II)-weak Ni(II) type complex will be analyzed on the molecular level. Then, the ligands screening model is built. Furthermore, the new strong Cu(II)- weak Ni(II) type complex will be designed according to screening model. A highly efficient complex system will be explored. Finally, it will be applied to quantitative control Ni doping amount in 44±2 wt% in the alloy by electrodeposition. The project can reveal alloy quantitative control mechanism, and provide theoretical foundation and technical support for alloy material electrodepositon engineering.Those research approach can make up for the current deficiency of complexing agent screening depending on experience. Undoubtedly, it has important theoretical significance and actual value.