利用C-H键直接芳化聚合法制备打破n型高分子半导体开发现状的低LUMO-HOMO能级材料
批准号:
21504010
项目类别:
青年科学基金项目
资助金额:
20.0 万元
负责人:
卢苇
依托单位:
学科分类:
B0109.高分子合成
结题年份:
2018
批准年份:
2015
项目状态:
已结题
项目参与者:
平海林、文静
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中文摘要
目前,n型高分子半导体的开发远滞后于p型高分子半导体。pi-共轭聚合物,尤其是那些低LUMO-HOMO能级的,是有机发光二极管中正孔阻挡层材料和有机薄膜太阳能电池中n型高分子半导体材料的重要来源。在pi-共轭聚合物合成方面,近年来一种新兴的利用芳香族C-H键直接芳化的聚合方法备受关注。缘由该方法与传统方法相比具有合成步骤少,产物纯度高,后处理简便及环境负荷小的优点。在相关成果当中,近年来项目负责人成功开发了三类利用缺电子性的芳香族C-H键直接芳化的聚合反应体系。该项目旨在 1.利用这三类聚合反应体系制备得到对社会有用的低LUMO-HOMO能级的共轭聚合物材料; 2.通过充分将精确的分子设计与C-H键直接芳化聚合法提供聚合物高纯度的特点相结合,提高聚合物材料的电荷迁移率,制备出能够代替富勒烯衍生物(PCBM)使用的新n型高分子半导体材料,从而打破n型的高分子半导体的开发远滞后于p型的现状。
英文摘要
At present, the exploiting of n-type polymeric semiconductors lags behind that of the p-type polymeric semiconductors. pi-Conjugated polymers of low LUMO-HOMO level are an important source of polymeric material of hole blocking layer of organic light emitting diode and n-type polymeric semiconductor material of bulk-heterojunction organic thin-film solar cell. A method named as direct C-H arylation polymerization/polycondensation (DArP) has received much attention as a new synthetic method of pi-conjugated polymers in recent years. Because this protocol should bring benefits in the synthesis of pi-conjugated polymers by decreasing the number of reaction steps, increasing the purity of products, simplifying the post-processing and reducing the environmental load. Among the researching achievements of DArP, the man responsible for this project has successfully developed three kinds of polymeric reaction system via direct arylation of electron-deficiently aromatic C-H bonds in recent years. This project aims to use the three kinds of polymeric reaction system to synthesize pi-conjugated polymers of low LUMO-HOMO level that is useful to the society; to improve the charge mobility of polymers and then offer novel n-type polymeric semiconductor materials that can be used instead of the fullerene derivative [60]PCBM by adequately combining the advantage of molecular design with the advantage of DArP in term of purity of products, breaking the situation that the exploiting of n-type polymeric semiconductors lags behind that of the p-type polymeric semiconductors.
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