国内外研究表明，d0半导体中的本征缺陷可有效调制材料铁磁性，这种新型d0铁磁性材料为寻找室温自旋电子学材料开辟了新的途径。ZnO在自旋电子学方面具有良好的应用前景，ZnO d0铁磁性收到了研究者的强烈关注。但目前国际上对ZnO d0铁磁性的研究遇到了以下困惑：ZnO d0铁磁性的确切来源是什么和其中铁磁性作用机制如何。本项目拟采用对缺陷非常敏感的正电子湮没技术等表征手段和磁性测量方法并结合第一性原理密度泛函理论，表征ZnO 单晶中的稳定存在的缺陷类型，探索电子(质子)辐照、退火气氛、退火温度等处理条件对缺陷和磁性的影响，阐明ZnO d0铁磁性来源和作用机制。通过本项目的实施，有望掌握调制d0铁磁性的有效方法，为通过缺陷工程准确调制材料铁磁性提供理论指导和实验依据。

Many investigations have shown that defects in semiconductors effectively mediate the material ferromagnetism, and this type d0 ferromagnetism materials could open a new route to develop room-temperature spintronics materials. Due to its tremendously applicational prospect in spintronics field, the d0 ferromagnetism in ZnO has attracted tremendious research interest. However, there are some questions to be clarified, such as the exact origin of ferromagnetism and mechanism. Hence this project will be devoted to study the stable defects, the origin of ferromagnetism and mechanism in single crystal ZnO d0 semiconductor using sensetive tools for defects, such as positron annihilation techniques and others, in combination with magnetic measurments and calculated results. This project will explore the effect on defects and magnetism by electron(proton) irradiation, annealing atomsphere and temperature and other treatment conditions. We hope we could obtain the effective methods to mediate the materials ferromagnetism, and this study will provide some theoretical guidance and experimental evidences for mediating the material ferromagnetism by defect engineering.