综合利用信息论、编码理论、组合数学、概率统计的方法研究闪存存储介质的重写码的构造方法和信息论模型。研究一次写入记忆介质的重写码和纠错重写码的构造方法，发现新的性能优良的一次写入记忆介质的重写码和纠错重写码，设计一次写入记忆介质的重写码和纠错重写码的快速编译码算法。建立闪存存储介质的重写码的信息论模型，确定闪存存储介质重复书写T次时的容量区域和可存储的最大信息量的公式。研究闪存存储介质的纠错码理论，设计闪存存储介质的纠错码的系统构造方法。这项研究的进展将丰富信息论的理论，使我们能够提高信息存储系统的效率和可靠性能，这有利于我国信息编码技术和信息存储技术的发展。

In this project, by using methods from information theory, coding theory, combinatorics, probability and statistics, we study the construction methods and information-theoretic models of rewriting codes for flash memory. We study and construct rewriting codes and rewriting error-correcting codes for flash memory, and find new good rewriting codes and rewriting error-correcting codes for flash memory. We design the fast encoding and decoding algorithms for rewriting codes and rewriting error-correcting codes for flash memory. We establish the information-theoretic models of rewriting codes for flash memory, and determine the capacity region and the maximum total number of information bits stored in the flash memory for T consecutive cycles. We study the theory of error-correcting codes for flash memory, and design the systematic construction method of error-correcting codes for flash memory. The research progress of this project will enrich the information theory, and enhance the efficiency and reliability of information storage systems, and promote the development of information coding technology and information storage technology in China.