实现电场调控材料中的磁性，特别是室温下低电压就能调控材料的磁化强度， 被认为是实现具有低功耗、高速度、非易失信息存储技术的关键， 也是当今信息存储技术亟需解决的核心问题之一， 受到科技界的高度重视。目前已有电场控制稀磁半导体、铁磁性金属、多铁材料磁性的报道。本项目拟研究电场对纯氧化物薄膜、非磁性元素替代的氧化物薄膜、固体为反铁磁的氧化物薄膜中磁性的调控，弄清电场调控氧化物薄膜磁性的规律， 阐明这些材料中电控磁效应与材料磁性的起源因素、电子结构、空位与离子迁移、界面特性的关联。还将研究电场调控氧化物阻变器件中阻变、磁化强度的规律。本项目还将对RFeO3基材料体系(这里R为非Gd、非Dy稀土)以及alfa-Fe2O3材料中的电控磁性开展深入的研究，研究其电控磁的机制，研究其电控磁现象是否伴随多铁性。本项目不仅有重要科学意义，而且有利于寻求新的、高效率的电控磁器件。

The achieving of electric field control of magnetism, especial the control of magnetization by low electric voltage at room temperature is the essential factor for the realization of information storage techniques with low power consumption，high speed and nonvolatile operation. It is one of core problems of modern information storage techniques, which has attracted much more attention. There are already reports on the control of magnetism in diluted magnetic semiconductors, ferromagnetic metals and multiferroics. This project aims to explore the control of magnetism in various thin films including pure oxides, nonmagnetic doped oxides and some oxides which is antiferromagnetic at bulk. We shall investigate the principles of control of magnetism by electric field in oxide thin films, analyze the relationship between the electric field controlled magnetism and ferromagnetic origin, electronic structure, movement of vacancies or ions and interface behaviors. We shall investigate the electric field control of resistive switching and magnetization in the resistive random access memory. This project also investigates the electric field control of magnetism in RFeO3 （here R is rare earth element, but not Gd/Dy） and alfa-Fe2O3 system, to understand their mechanism, especially to investigate the possibility of multiferroics. This project is of significant not only for scientific interests， but also for the finding of novel and high efficiency devices with electric field control of magnetism.