单光子源器件是开展单光子态构筑量子比特、实现光子纠缠、实现光量子密码、线性光量子计算等量子信息领域的关键量子器件。研究高性能的单光子源器件，特别是光通信波段的单光子发射器件，实现对单光子的可控制发射及有效检测技术具有十分重要的科学意义。单量子点是典型的二能级量子体系，是实现固态光泵和电驱动单光子器件的理想选择之一。本项目采用分子束外延及金属有机化学气相沉积生长低密度长波长InAs/InP自组织量子点，开展低温单量子点光谱测量，研究单量子点荧光光谱寿命及光子关联函数测量，判断单光子的发光纯度。解决量子点低温光学定位，制备出光子晶体微腔量子点耦合结构，研究量子点激子与微腔腔模耦合对单光子辐射特性的作用。完善长波长低温共聚焦显微光子时间关联测量系统。研究光泵浦和电驱动单光子发射器件的发光效率，单光子发射的纯度等重要物理参数，制备高质量1.55 微米单光子器件。

Single photon sources are key quantum devices for building qubits,making photon entanglements, carrying out quantum cryptography and linear quantum calculations in the field of quantum information. It is very important to fabricate the high quality single photon sources, especially in the telecom band. To realize the controlled-photon emission and carry out measurements are also the same important. Single quantum dots (QDs) are typical of two-level quantum system. It is one of the best choices for fabricating single photon sources driven by laser or electric field. Here, self-assembled InAs/InP QDs with lower density are grown by molecular beam epitaxy(MBE) or metal-organic chemical vapor deposition (MOCVD). The photon emissions, decay times and second-order correlation measurements(HBT) of the QDs at low temperature are measured. First,the position of QDs on the sample is identified by QDs emission at low temperature. Then, we can fabricate the photonic crystal nanocavity. The influences of dot-cavity coupling on the single photon emission are investigated.We will further finish the setup of HBT for telecom band. The key physical parameters of the quantum efficiencies and the values of the HBT at zero delay time of the single photon sources pumped by laser or driven by electric field are measured. At last, we will fabricate a high quality single photon device emitting at 1550 nm.