高效、轻质空间电源需求及先进微电子制造技术催生了倒置生长晶格失配多结太阳电池的快速发展，目前倒置III-V族四结太阳电池（简称IMM4J电池）的制备工艺已经基本成熟。本项目针对新型高效IMM四结太阳电池的空间应用需求，以IMM4J电池的两结关键的晶格失配低带隙InxGa1-xAs子电池为研究对象，首先研究带电粒子辐照后电池电性能、光电转换行为的退火恢复规律；再利用深能级瞬态谱（DLTS）、正电子湮灭寿命谱（PALS）等测试手段重点研究了两结InxGa1-xAs子电池的辐照损伤缺陷状态、分析缺陷对电池电性能影响的演化规律，以及不同温度和时间退火条件下缺陷能级的动态演化机制，为空间太阳电池的选材、带隙调整、工艺优化及在轨可靠服役提供技术支持和改进方向。

Due to graet requirements for space solar cell with high efficiency and power/mass ration and developed micro-electronics technology, it spurs fast development of multi-junction solar cell using inverted epitaxial technology. Presently, it is getting matured to fabricate some kind of inverted metamorphic III-V group 4-junction solar cells (IMM4J). Based on the space application requirements, we will systematically investigate the annealing effects of the electrical properties and photoelectric conversion behavior of the two low-gap lattice mismatch InxGa1-xAs sub-cells of the IMM4J solar cell. In this project, irradiated defects in InxGa1-xAs sub-cells will be focused on their formation, corresponding evolution processes and dynamic evolution machanism under different annealing temperature and time using complementary analytical methods such as deep level transient spectrum (DLTS), positron annihilation life spectrum (PALS) et. al. All of the investigated results would provide technical and theoretical support to improve the properties of the IMM4J cells in terms of materials selection, gap modifications, manufacture process optimizing, safe and reliable services on-orbit.