发光波长490nmGaN基LED的研究将弥补目前普通LED照明灯光谱缺失青光的不足，为制作高品质类太阳光谱的LED照明提供了重要基础。然而目前GaN基LED存在随波长增长，发光效率由蓝光460nm至清光490nm下降很多，阻碍了青光LED的应用。本项目以提高GaN基青光LED发光效率为目的，研究预应力层、量子阱结构以及V坑等对LED发光特性的影响。研究内容：1）青光LED的InGaN量子阱的生长方法, 包括利用Si衬底引入的张应力，提高生长温度，采用V坑结构增强空穴注入，屏蔽位错等; 2）应力对InGaN基青光LED发光特性的影响。期望通过器件结构设计、材料生长、器件制作与测试，找出发光效率随波长下降的原因，最终获得内量子效率大于70%的GaN基青光LED。

The research of luminescence wavelength 490nm GaN-based LED will make up for the ordinary LED light spectrum lack of glaucoma, provide the important base of the production of high-quality solar spectrum of LED lighting. However, the current GaN-based LED with the wavelength of lengthening, luminous efficiency from 460nm to 490nm drop a lot, hinder the application of glaucoma LED. In order to improve the luminous efficiency of GaN-based glaucoma LED, the effects of prestressing layer, quantum well structure and V-pits on the luminescence characteristics of LED were studied. The research methods include: 1) The growth method of InGaN quantum well, including the use of Si substrate to introduce the tensile stress, increase the growth temperature, the use of V pit structure enhancing the hole injection and shielding the dislocation in the quantum wells, etc .; 2) the effect of the stress on GaN-based LED luminous characteristics. It is expected that through the device structure design, material growth, device fabrication and testing, it is found that the luminous efficiency decreases with the wavelength, and finally the GaN-based glaucoma LED with internal quantum efficiency greater than 70% is obtained.