高性能的半导体绿光发光器件是当今国内外研究的热点与前沿，而采用InGaN量子点作为有源区材料，可以显著提升绿光器件的发光性能。本项目针对高性能半导体绿光器件有源区的需求，研究自组装绿光InGaN量子点的发光机理。我们利用金属有机物化学气相沉积（MOCVD）技术制备发光波长在500-580nm范围内的绿光InGaN量子点样品；利用SEM、TEM、EL、PL、DLTS等表征与检测手段，揭示量子点的材料结构对其发光特性的影响规律；阐明局域应力对量子点生长动力学过程以及发光性能的影响机制；研究绿光量子点体内晶体缺陷的产生和演化，并分析缺陷形成的深能级中心对载流子的俘获和非辐射复合等物理过程；澄清量子点的光注入与电注入发光机理，建立一个包含载流子的注入、输运、捕获、逃逸、泄漏以及复合等物理过程的量子点发光模型。本项目的研究结果将为高性能绿光GaN基发光器件有源区材料的研制提供扎实的理论基础。

High-performance green semiconductor light-emitting devices, are currently research hot topic both domestically and internationally, and the use of InGaN quantum dots as the active layer materials can significantly improve the devices characteristics. This project is aimed at the demand of high-performance semiconductor green devices. Study the influence of structure of self-assembled green InGaN quantum dots on the luminescence properties, reveal its luminescence mechanism, and set up the corresponding luminescence model. We use the metal-organic chemical vapor deposition (MOCVD) technology to fabricate InGaN quantum dots with different structural parameters and the luminescence wavelength in the range of 500-580nm. The material structure and physical properties of InGaN quantum dots are studied by using various macroscopic and microscopic examination techniques and the physical mechanism of the impact of material structure on the luminescence properties is analyzed. The localized stress and crystal defects are studied, and their effect on the luminescence properties of the quantum dots is analyzed. The luminescence mechanism of optical injection and electric injection of quantum dots is clarified, and a quantum dot luminescence model, including injection, transport, capture, leakage and recombination of charge carriers, is established. The research results of this project will provide an important theoretical basis for the development of high-performance green GaN based light-emitting devices.