本项目利用微电子机械系统（MEMS）技术和三维集成技术，研制高灵敏度、高像素一致性的硅基单片三维集成非致冷红外焦平面探测器阵列。采用SOI制造的有源单晶硅场效应管作为红外探测器器件，通过硅片转移和三维集成技术将探测器阵列转移至信号处理电路表面，并通过MEMS技术实现探测器层的悬空绝热，获得探测器阵列与信号处理电路单片三维集成的非制冷红外焦平面阵列。在红外热吸收层表面生长垂直排列的碳纳米管阵列，实现红外吸收增强，提高探测器灵敏度。重点解决探测器阵列设计与制造、硅片转移和三维集成、低噪声放大和AD转换信号处理电路，以及碳纳米管阵列合成等方面的技术问题，在单晶硅场效应红外敏感器件实现、探测器阵列与信号处理电路单片三维集成、碳纳米管阵列红外吸收增强，以及跨尺度多物理场耦合分析等方面获得创新性成果，解决相关方向的基础科学和技术问题，实现单片三维集成非制冷红外探测器的原型器件。

Uncooled infrared focal plane has been widely used in many areas including safety monitoring, assisted driving, fire alarming, etc. This proposal is targeting the research and development of an uncooled infrared focal plane (FPA) with high sensitivity and high pixel uniformity using MEMS and 3D integration technologies. The FPA uses active single crytalline field effect transistors (FET) as the sensing devices, which is fabricated on a SOI wafer and transferred to the top of the signal processing circuit wafers. Using 3D integration and MEMS technologies, the FET pixels are supended via long lengs and integrated with the signal processing circuit through 3D interconnects, which enables low thermal conduction of the FET array and high detection sensitivity. An in-situ synthesizing method is developed to grow carbon nanotubue (CNT) arrays on the suspended pixel surface as an infrared adsorbing enhancing layer to improve the adsorbing effeciency. This project focuses on the realizatoin of the FPA through solving the challenging problems including the FET design and fabrication, wafer transfer and 3D integration, low noise amplifier and AD converter, as well as the synthesizing of CNT arrays on a suspended structure.