自旋霍尔效应是在自旋电子学中很具有潜在应用价值的一个效应，但有关其微观机理研究远不能让人满意，这其中最关键的问题在于，实验上至今还无法区分出自旋霍尔效应的本征贡献和非本征贡献，这就限制了人工调控的可能性。针对这一困难，我们提出两种不同的实验方案("H图形"以及"铁磁注入")，通过系统调节分子束外延单晶薄膜的厚度，取得由于有限尺度效应导致的自旋霍尔效应的差异，进而建立自旋霍尔电导率与纵向电导率的标度关系，最后区分出来本征与非本征贡献。我们期望这一研究将有助于加深对自旋霍尔效应的理解，并推动自旋电子学的发展。

The spin Hall effect is one of the critical issues in the field of spintronics as it promises bright future for applications. However, the understanding of the underlying mechanism is still far from satisfying. One bottleneck is the lack of a reliable way to experimentally identify the intrinsic and extrinsic contributions of the spin Hall effect. As a result, one has limited access to modify the magnitude of the spin Hall effect. To meet the challenge, we propose two different experimental methods, i.e.,the H-pattern method and the spin injection method, to quantitatively analyse the spin Hall effect. By employing the molecular beam epitaxy technique, we can systematically tune the thickness of single crystal samples. Consequently the spin Hall effect varies due to the finite size effect. We can therefore build up a proper scaling of the spin Hall conductivity as a function of the longitudinal conductivity, which shall identify the intrinsic and extrinsic contributions of the spin Hall effect. We expect the proposed study shall provide significant development in spintronics.