Sb基II类超晶格成为继碲镉汞（HgCdTe）后的第三代焦平面阵列红外探测器优选材料，具有广阔的市场应用前景及军事价值。锑化镓（GaSb）因其与各种三元、四元的III-V族化合物半导体材料的晶格常数匹配度高，成为制备上述II类超晶格红外探测器的最佳衬底材料。大尺寸GaSb晶体生长和缺陷控制是该领域的一个研究热点。由于所使用的LEC、VB、VGF晶体生长技术所具有的特点，以及GaSb材料易被氧化的特性，使进一步降低其位错密度存在较大困难，从而限制超晶格红外探测器件的性能的提升。针对此问题，本项目提出采用液封热交换法晶体生长技术，构建计算机多物理场仿真模型，实现大尺寸晶体生长热场优化和固液界面形貌调控。另一方面，解析氧化镓杂质在GaSb熔体、液封剂两相流体系中的动力学输运过程及分布特征；从微观角度，建立起基于夹杂颗粒存在的原子台阶流生长及位错增殖模型。为位错缺陷密度的进一步降低提供支撑。

The Sb-based type II superlattice infrared detector materials has become the preferred material for the third generation focal plane array infrared detector after HgCdTe material, with broad market application prospects and military value. Gallium antimonide (GaSb), because of its high lattice constant matching with various ternary and quaternary III-V compound semiconductor materials, has become the best substrate material for the preparation of the above-mentioned tpye II superlattice infrared detectors. Large-scale GaSb crystal growth and defect control is always a research hotspot in this field. Due to the characteristics of the LEC, VB, and VGF crystal growth technologies, and the characteristics of GaSb materials that are easily oxidized, it is more difficult to further reduce their dislocation density, which further affects the performance of superlattice infrared detector. In response to this problem, basing on the multiphasic simulation, the use of Liquid encapsulated heat exchange crystal growth technology are proposed to achieve the thermal field optimization for the growth of large-scale crystals and morphology control of solid-liquid interface; In addition, the kinetic transport process and distribution characteristics of gallium oxide in the two-phase flow system of GaSb melt and liquid sealant will be analyzed; From a microscopic perspective, a new model including the atomic step flow growth and dislocation propagation with the presence of inclusion particles will be established to provide a better support for the further reduction of dislocation density.