冷阴极是真空微电子器件中的核心技术，在平板型显示器、大功率微波器件、扫描电子显微镜、电子束光刻、压力传感器等军民工业中均具有重要的意义。本课题拟针对冷阴极材料的实际应用，充分利用宽带隙半导体特有的负电子亲和势性质，从外延生长入手改进AlN薄膜的质量，研究AlN外延薄膜的平面电子发射特性。 本课题的研究过程将从AlN材料的外延生长入手，针对Al原子表面迁移动力学及大失配异质衬底上AlN外延生长机制、AlN外延薄膜中的位错演化过程和缺陷密度控制、GaN/AlN复合结构冷阴极材料的物理模型及能带设计、氧杂质在AlN材料中的行为模式及对电子发射密度的影响机理和AlN材料的表面形貌对电子发射特性的影响及调控等关键科学问题展开研究，期望能更深入地理解AlN薄膜中的结构参数对电子发射特性的影响机制，最终在高质量外延生长的基础上，获得具有良好发射特性的AlN平面冷阴极材料。

Cold cathode is one of the key elements in the vacuum microelectronic device. It has potential applications in many fields, such as the flat panel displays (FED), scanning electron microscopy (SEM), electron beam lithography (EBL), pressure sensor etc.Considering the practical applications of cold cathode and the negative electron affinity of wide band semiconductors, this project concentrates on the crystal quality and field electron emission of AlN films. The research will start from the epitaxial growth of AlN material, and several scientific questions would be studied in depth, including the surface migration dynamics of Al atoms and epitaxial mechanism during the AlN growth on heterogeneous substrates, the control of dislocation evolution and defect density, the physical model and energy band design of GaN/AlN complex structure, the behavior of oxygen impurities and its influence to the electron emission, the regulation of surface morphology of AlN films, and so on. On the base of understanding in-depth of mechanisms above, the planar cold cathode material of AlN with better characteristics of electron emission is expected.