NEA GaAlAs光电阴极的禁带宽度与Al组分有密切联系，通过调整Al组分大小，可控制其光谱响应范围，实现高度选择性的蓝绿光响应。当前制约GaAlAs光电阴极在蓝绿光探测领域应用的主要因素是低的电子漂移扩散长度和量子效率，针对上述问题，本项目以研制高性能变Al组分结构的蓝绿光敏感GaAlAs光电阴极为目标，主要开展以下工作：结合第一性原理计算和Silvaco TCAD仿真分析不同变Al组分结构光电阴极的能带结构和电子输运规律，建立变Al组分GaAlAs光电阴极的量子效率模型；进行变Al组分GaAlAs光电阴极结构设计，并采用MOCVD或MBE技术外延生长光电阴极材料；融合制备过程中的多信息量研究化学清洗、加热净化和Cs-O激活等工艺，确定一套适合变Al组分GaAlAs光电阴极的制备工艺，最终获得量子效率高、稳定性好的蓝绿光敏感GaAlAs光电阴极。

The band-gap of NEA GaAlAs photocathode has a close relation with Al component, the spectral response of GaAlAs photocathode could be controlled to respond to blue-green light by changing Al component. The main factors limiting GaAlAs photocathode used in field of blue-green detection are low electron drift and diffusion length and low quantum efficiency. Aiming at the problems mentioned above, we focus on preparing high-performance blue-green GaAlAs photocathode with variable Al component structure, the main research works are as follows. The band-gap structures and the electron transport rules of GaAlAs photocathodes with different varying Al component structures will be studied according to first principle calculation and Silvaco TCAD simulation. The quantum efficiency model of variable Al component GaAlAs photocathode is going to be built. The structure of variable Al component GaAlAs photocathode can be designed, and the GaAlAs epitaxial materials will be grown by MOCVD or MBE. The chemical cleaning, heat cleaning, and Cs-O activation will be studied by analyzing the multi information of preparing process, and the preparation technology of variable Al component GaAlAs photocathode will be fixed. Finally, high quantum efficiency and high stability blue-green GaAlAs photocathode would be prepared by the fixed preparation technology.