与CMOS工艺兼容的HfO2基铁电场效应晶体管(FeFET)在民用和军用领域都具有广阔的应用前景。然而，耐久性退化是阻碍其应用的瓶颈。采用晶态high-k绝缘层有望抑制HfO2基薄膜中非铁电相的形成和降低FeFET中绝缘膜上的电场强度，从而提高HfO2基FeFET的耐久性。然而，如何在晶态high-k层上抑制非铁电相的生成以及HfO2基FeFET耐久性退化的微观机理还不清楚。基于此，本申请项目以采用晶态high-k绝缘层的HfO2基FeFET为研究对象，通过研究热处理对晶态high-k层上HfO2基薄膜微观结构的影响，揭示晶态high-k层对HfO2非铁电相的抑制机理。同时，通过对HfO2基FeFET中电畴结构及其演变进行研究，建立微观结构、电畴演变和耐久性之间的关联，阐明FeFET耐久性退化的微观机制，从而优化工艺制备出性能良好的HfO2基FeFET。

Complementary-metal-oxide-semiconductor (CMOS) compatible HfO2 based ferroelectric field-effect transistor (FeFET) has a great potential application in information storage devices for both civilian and military uses. However, the endurance degradation in HfO2 based FeFETs has become the technical bottleneck for the application of this technology. The use of crystalline high-k insulator layer is expected to suppress the formation of nonferroelectric phase and reduce the electric field in the insulator layer, thus improving the endurance of the HfO2 based FeFET. However, the mechanisms of suppressing the formation of nonferroelectric phase with crystalline high-k gate dielectrics, and the endurance degradation in the HfO2 based FeFET are still not clear. Based on these issues, this project will focus on the HfO2 based FeFET with crystalline high-k layer, and investigate the mechanism of suppressing the formation of nonferroelectric phase with crystalline high-k gate dielectrics, by studying the effects of heat treatment on the microstructures of the ferroelectric films. Furthermore, using domain evolution as a bridge, this project aims to establish a relationship among microstructures, domain evolution and endurance in the HfO2 based FeFETs, and therefore reveal the degradation mechanism of the FeFET, which could provide guidelines for optimizations on the HfO2 based FeFET with improved endurance.