氧化物超晶格诱导新型磁电多铁畴及新性能研究

量子效应的物理极限使得摩尔定律举步维艰，对现有信息技术所依赖的材料提出了巨大挑战。因此，迫切需要发展新型信息存储材料。目前的研究集中在磁性skyrmion上。然而，对于skyrmion的调控目前局限于外加磁场或电流，将产生大量的焦耳热，不利于获得低功耗的信息存储材料。因此，探索可电场驱动的新材料和新结构已迫在眉睫。我们的前期研究发现铁电/介电氧化物超晶格中可以构建铁电涡旋拓扑畴阵列[Nature 530，198(2016)],亦可诱导铁电畴壁类型的演变[Nano Letters 17, 486(2017)]。受此启示，我们提出在多铁/介电氧化物超晶格中构建新型室温磁电多铁畴阵列。本项目拟在生长高质量超晶格的基础上，探究超晶格序构诱导的多铁拓扑畴阵列，获得高性能的多态存储材料，通过施加电场实现对拓扑畴和相关物性的调控。项目的顺利实施将获得下一代信息技术所需的高灵敏、低功耗的新型信息存储材料。

Moore's Law will soon reach its end because of the physical limitations of quantum effect，leading to great challenges for the materials used in the information technology. How to develop new information storage materials is desperately needed. Nowadays, many scientists are focusing on the study of magnetic skyrmions. However, the manipulation methods of skyrmions are limited to magnetic field and electric current. These approaches generate a lot of Joule Heat, which is not suitable for low-consumption information storage devices. Therefore, it is urgent to explore the electric field controllable materials and structures. ..Our previous study has revealed the creation of ordered ferroelectric vortices in ferroelectric/dielectric superlattices[Nature 530，198(2016)] and the domain structure evolution as well [Nano Letters 17, 486(2017)]. Motivated by this, we propose to obtain new-type magnetoelectric multiferroic domain structures. In this study, based on the growth of high quality superlattices, we will be able to prepare high performance multiple-state storage materials. the novel physical properties in the antiferroelectric/ferroelectric phase boundary. Then, electric field will be applied to reversibly drive the multiferroic toplogical domains and related physical properties. The implementation of this project will promote the realization of high-sensitivity and low- low-consumption storage materials for the next-generation information technology.