为满足可工作在常温下的小型化太赫兹源的需求，本项目对工作于偶极畴模式的InN基耿氏二极管器件设计进行研究。针对太赫兹频段下耿氏二极管器件内部频繁出现的载流子上冲和下冲现象，结合泊松方程和蒙特卡洛方程的自洽求解，准确描述太赫兹源的器件物理特性，进一步对器件性能进行预测。针对高频下动量和能量弛豫问题，利用蒙特卡罗方法对耿氏二极管内部在时间和空间上出现的弛豫过程进行研究。针对耿氏二极管出现的趋肤效应问题，基于蒙特卡洛方法和麦克斯韦方程，将趋肤效应与玻尔兹曼相结合，研究器件的输运特性。在此基础上，考虑耿氏二极管和外电路的耦合问题，对工作于偶极畴不同工作模式，偶极畴渡越模式，偶极畴延迟畴模式，偶极畴淬灭畴模式与电路参数的关系及振荡性能进行深入的研究。针对高温和高频耿氏器件性能退化的问题，基于输运研究，对退化机理进行深入研究。最终建立可在常温工作并且满足功率和频率要求的InN基耿氏二极管太赫源。

For the requirement of small size THz source working under roomt temperature, we do research, do the work of Gunn device designing working under dipole mode.For the frequenctly carriers overshoot and undershoot in Gunn dioxde, we adopt the self-consistent solution of Monte Carlo method and Poisson equations to describe the physical characteristic and predictive the device performance.For the momentum and energy relaxation problems under high frequencies,with the help of Monte Carlo method, the relaxtion process in time and space will be researched.For the skin effect under THz frequency, we adopt the couple of Monte Carlo method and Maxwell's equations considering the skin effect with Boltzmann equation to solve the problem of device transport properties. Based on the transport research, considering the couple of Gunn dioxde and external circuit. The ralationship between different working modes, dipole transition mode domain, dipole domains domains delay mode, dipole domains quenched domain mode, and circuit parameters and oscillation performance will be researched deeply. For the problems of Gunn device performance degradation under high-temperature and high-frequency, the degradation mechanism will be conducted in-depth study based on transport studies. Finnally, construct the Gunn dioxde THz source which can satisfy the requierment of power and frequency.