高性能高In组分InGaN材料的生长，是制备覆盖全光谱的InGaN基光伏器件以及长波氮化物器件的必然要求。然而，随In组分增加而导致的材料质量下降以及p型掺杂难题限制了其器件应用。本项目针对目前高质量高In组分InGaN材料的生长难题，基于分子束外延（MBE）的低温及超薄生长控制特点，以自支撑GaN为衬底，利用金属调制外延(MME)二步生长方法有效降低材料的位错密度;研究高In组分InGaN薄膜材料的退火效应,获得高质量、无相分离以及表面平整的InGaN材料,获得In组分与生长条件、生长模式之间的关系;研究背景杂质的补偿行为,探索新的可控p型掺杂方法；基于高In组分InGaN的材料生长，制备GaN/InGaN异质结和InGaN/InGaN同质结结构光伏器件，探索器件性能与衬底和结构之间的关系。项目的顺利实施必将为高效率全In组分InGaN电池的制备奠定坚实的基础。

The successful growth InGaN material with high indium composition is critical to fabricate the full-spectrum photovoltaic device and other GaN device performed at the long wavelength. However, the material quality of InGaN degraded with increasing indium composition and therefore refines its device application. This project aimed at the growth difficult of InGaN to solve the problem by using molecular beam epitaxy (MBE) growth. On the basis of GaN substrate, metal modulation epitaxy will be used to decrease the dislocation density. High-temperature annealing also will be performed to obtain the high quality and phase separation-free InGaN material and also to get the relationship between indium composition and growth condition and growth mode. We will try to decrease the compensation behavior of the background impurity to develop the controllable p-type doping method. Using the InGaN material, GaN/InGaN and InGaN/InGaN photovoltaic device will be fabricated. The accomplishment of this project will provide a solid fundamental for the future high efficiency InGaN solar cell.