隧穿场效应晶体管(TFET)，是基于电荷隧穿效应的新一代电子器件，被认为可以克服传统硅基FET在尺寸缩小过程中所面临的挑战，例如亚阈值摆幅的理论极限（60 mV/dec）、高功耗等。TFET器件在拥有巨大应用前景的同时，却面临着无法同时拥有与传统硅基FET相比拟的开态电流密度和陡峭的亚阈值摆幅斜率（小于60 mV/dec）的挑战。二维材料InSe因其具有适中的带隙、较高的迁移率和非常小的有效质量，有望改善上述问题。本项目拟研究基于InSe异质结构在新型TFET器件中应用的物理基础；探索和完善高质量InSe异质结及其器件制备的整套工艺；深入研究金属电极和InSe材料接触的形成机理、探索降低接触电阻的有效策略；实现基于InSe异质结构的TFET器件同时具有高电流密度和小于60 mV/dec的亚阈值摆幅。本项目中实现的创新和突破有望为发展我国下一代主流信息处理技术做出贡献。

Tunneling field effect transistor (TFET) device is a promising alternative of traditional silicon-based FET, as it can overcome many challenges faced by traditional silicon-based FET, such as subthreshold swinging (60 mV/dec), high-power consumption etc. Traditional TFET devices holds great promise, however are still facing challenges of achieving the high on-current density comparable to that in silicon based FET and steep threshold slop at the same time. Two-dimensional (2D) materials Indium chalcogenides has very high mobity, suitable gap and small effective mass, showing promise in solving these issues. In this project, we propose to study the fundamental science of applying high mobility 2D materials to TFET device. We will optimize the whole fabrication processes of high mobility 2D materials and its heterostructure as well as corresponding TFET devices. We will further study contact formation mechanism of metal and 2D materials, carrier’s injection mechanism, and transport mechanism in the TFET device and seek the strategy of reducing contact resistance. We will fabricate the InSe heterostructure based TFET with high on-current density and steep threshold swing slop. This project shows the potential of making a series of breakthroughs on laying the fundamental science foundation for the high-performance TFET devices based on high mobility 2D materials vdw heterostructure, and making contributions to the development of the next generation information processing technology in China.