智能可穿戴光电探测器因在图像传感、光通信、火灾检测、生物医学成像、环境监测、空间探测与安全检测等领域的重大应用价值而倍受瞩目。但目前，商用的晶体硅或Ⅲ-V族合金半导体光电探测器因易碎、成本高、性能低而难以满足可穿戴设备的应用要求；尚处于实验室研究阶段的用MBE和CVD方法制备二维材料因设备复杂、成本高、制备温度高等缺点也不符合商业化实用标准。相比之下，通过PLD制备的IVA-VIA族二维材料不但迁移率高、光吸收系数高、机械柔韧性好，并且面积大、环境友好、成本低，有望成为构建高性能可穿戴光电探测器的新宠。于此，我们拟采用PLD技术制备大面积、高质量的SnS2和SnSe2二维材料薄膜；表征并分析其光电探测机制，设计并优化其器件结构体系，最终实现柔性、低成本、高性能可穿戴光电探测器的构筑，为柔性光电子学的发展提供新思路。

Smart wearable photodetectors have drawn great attention for their great application value in such fields as image sensing, optical communication, fire detection, biomedical imaging, environmental monitoring, space exploration and safety detection. However, commercial crystalline silicon or III-V alloy semiconductor photodetectors are difficult to meet the application requirements of wearable devices due to their fragility, high cost and low performance. In addition, the MBE and CVD methods which are still in the research stage of the laboratory are not in conformity with commercial practical standards due to their complicated equipment, high cost and high preparation temperature. In contrast, IVA-VIA two-dimensional materials prepared by PLD not only have high mobility, high light absorption coefficient, good mechanical flexibility, but also large-scale, environmental friendliness and low cost. Therefore, the IVA-VIA two-dimensional materials are expected to be the new favorite to build high-performance wearable photodetectors. Here, we intend to use PLD technology to prepare large-scale, high-quality SnS2 and SnSe2 two-dimensional material films. Then, we characterize and analyze their photodetection mechanism, design and optimize their device structure system. Finally, we achieve flexible, low cost, high performance wearable photodetectors, offering a new insight into the development of flexible optoelectronics.