二维过渡金属硫族化合物(TMDCs)的控制生长与性能研究是二维材料的研究热点，尤其以二维晶体1T-TaS2为代表的金属性TMDCs呈现出与材料维度密切相关的超导、电荷密度波(CDW)等特性，为研究CDW的物理机制与规律提供了独特的材料体系。而目前通过化学气相沉积法生长1T-TaS2二维晶体时，由于在升温过程中前驱体的爆发性反应，不能确定参与反应量和控制反应进程，决定了生成的二维晶体无法精确地控制层数，针对此问题，本项目通过改进化学气相沉积法进料方式，提出层数可控1T-TaS2生长的新思路：在反应器外部，分别气化TaCl5和单质硫两种前驱体，通过控制载气流量操控前驱体定量、间歇式供应，精确实现1T-TaS2二维晶体的层数可控生长。并在生长过程中原位掺杂Na、Cu等原子调控1T-TaS2的CDW相转变温度，诱导其超导电性，研究层数和掺杂对1T-TaS2二维晶体CDW性质的影响。

Construction and property investigation of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is an emerging highlighted research interest in recent years. Typical TMDCs material, such as 1T-TaS2, exhibits some dimensionality related properties, such as superconducting and charge-density-wave (CDW). The correlation between dimensionality and physical properties of 1T-TaS2 could provide unique material systems to study the physical mechanism and laws of CDW property. TMDCs growth of 1T-TaS2 crystal by chemical vapor deposition has been receiving attention recently. However, the explosion of the precursor during the heating process is unable to control accurate amounts of reacted reagents and the synthesis process, resulting in uncontrollable layer number of the produced TMDCs crystal. To solve this problem, we propose a modified reagent delivery system during the chemical vapor deposition process to precisely control the layer number of the 1T-TaS2 crystal. In our procedure, the volatile halide precursor TaCl5 and sulfide vapor are applied outside the reaction chamber, respectively. By precisely controlled flows of the two precursors, the intermittent chemical vapor deposition will synthesize the layer-by-layer stacked 2D 1T-TaS2 crystal with controllable layer number. Furthermore, during the synthesis process, the in situ doping atoms (with Na, Cu, et. al.) can be used to modulate the CDW phase transition temperature of 1T-TaS2 and also induce its superconductivity. Overall, the construction layer number and doping effects on the CDW property of 1T-TaS2 2-D crystal will be systematically investigated.