深紫外光电器件的研发是当前光电子领域中一个重要的发展方向，与其相关的宽带隙半导体材料的研究也备受人们关注。本申请项目拟利用等离子辅助激光分子束外延技术，在不同性质的衬底上生长禁带宽度在深紫外波段（200-320nm）的MgZnO/MgO应变超晶格材料；研究MgZnO/MgO应变超晶格的光学和电学特性随微结构变化的关系，并利用高质量的应变超晶格制备新型的深紫外光探测器件。通过改变超晶格的微结构和应力的大小和分布，对MgZnO/MgO应变超晶格的相变、能带结构和光电特性实施有效调控，解决目前宽禁带半导体MgZnO材料和器件研究中遇到的"相分离"、禁带宽度变化不连续和器件量子效率低的问题；揭示应变影响超晶格的微结构、能带结构、激子发光及载流子输运特性的物理机制。本项目的研究将为深紫外光探测器件的开发提供材料基础和新的设计思路，扩展II-VI族宽禁带半导体的应用范围。

Development of deep ultraviolet optoelectronic devices is of very most importance in the optoelectronic industry. As a result,related wide band gap semiconductors like AlGaN and MgZnO have attracted more and more interest. In this proposal, we plan to use plasma enhanced laser molecular beam epitaxy technique to epitaxially grow MgZnO/MgO strained-superlattices on various substrates with their bandgaps falling in the deep ultraviolet region (200-320nm), and fabricate deep UV light detectors with these novel MgZnO/MgO strained-superlattices.The phase transition, energy band structure and optoelectronic properties of MgZnO/MgO strained-superlattices will be modulated by adjusting the microstructure and the magnitude and distribution of strain within superlattice. This can potentially solved the problems in material engineering of wide-band-gap MgZnO alloys, such as the phase segregation，the composition inhomogeneity, the bandgap variation discontinuity and low device quantum effciency. We will investigate the influence of strain on the microstructure,band structure, exciton emissions and carrier transportation of superlattices and unveil the physical mechanisum behind that. The proposed study will provide high quality materials for deep UV optoelectronic detectors and inspire new ideas for device designation.