在目前的太赫兹器件及系统研究中，肖特基二极管具有十分广阔的应用前景，但是肖特基二极管的频率特性却受限于器件结构带来的电阻电容耦合问题。本项目针对上述问题，提出采用离子注入的方式在台阶上实现区域性均匀掺杂形成N+/N-结，进而在掺杂区域两侧制备电极形成特殊的平面横向二极管结构，该结构非常有潜力实现电阻和电容去耦化，突破目前肖特基二极管频率特性的瓶颈。本项目拟通过设计多种平面横向结构，研究各种结构的载流子横向输运特性对器件的影响，探寻电阻电容去耦化技术，降低电阻和电容的关联性；同时研究离子注入工艺（温度、浓度等）对器件性能的影响，开发出基于平面横向结构肖特基二极管的关键流片技术，最终实现横向结构的高截止频率的太赫兹肖特基二极管。

Recently, in the research of terahertz (THz) devices and systems, schottky barrier diode (SBD) has a very broad application prospects, but the frequency characteristics of SBD are constrained by the problem of resistance and capacitance coupling induced by the device structure. This project aims at the above problem to reduce the relevance of the resistance and capacitance by the ion implanted plane lateral GaAs THz SBD. The plane lateral structure SBD with a high cut-off frequency, which contains regional uniformly doped N+/N- junction on the platform by the way of ion implantation and special electrodes prepared on both sides of the N+/N- junction. The structure is a very potential candidate for resistance and capacitance decoupling, which overcomes the bottleneck of frequency characteristics of SBD. In this project, we design a variety of plane lateral structures, and study the regularity of devices performance effect on carrier transport properties to reduce the relevance of the resistance and capacitance. We also investigate the influence of ion implantation process (temperature, concentration, etc.) on the device performance. Finally, a high cut-off frequency THz SBD is realized based on the lateral structure.