InGaN/GaN多量子阱是高亮度蓝光和绿光LED的有源区，应变和局域态是量子阱的两大特性，对器件性能有决定性的影响。目前研究难以表征量子阱发光时的应变，声子与激子的耦合包含量子阱发光时应变与激子局域化信息。本项目拟着眼于量子阱低温电致发光谱的声子伴线，根据纵光学声子频率和耦合强度研究量子阱发光时的应变和局域态。内容包括：（1）不同电流密度下发光阱应变变化及机理；（2）量子阱生长方法和阱垒结构影响激子局域化程度和器件性能的机理。本项目有望：第一，将GaN基LED中声子与激子耦合频率的探测发展为对量子阱发光时应变进行表征的一种全新手段；第二，通过系统研究激子局域化影响因素以及对器件性能的影响机理，在InGaN量子阱发光机理的认识上实现新的突破，并在此基础上改进量子阱结构与优化生长条件，提升器件性能。

InGaN/GaN multiple quantum wells, are the active region of high brightness blue and green light emitting diodes. Strain and localized states are featured by the multiple quantum wells and have decisive influence on the device performance. The strain of quantum wells under luminescence is difficult to be determined by current research. The phonon-exciton coupling contains information on the strain and exciton localization of the quantum wells under luminescence. This project intends to focus on the phonon replicas in the low-temperature electroluminescence spectra. Based on the longitudinal optical (LO) phonon frequency and the coupling strength derived from the phonon replicas, the strain of the quantum wells under luminescence and exciton localization are expected to be determined. The contents include: (1) research on the strain variation of the quantum wells with injection current and the corresponding mechanism; (2) research on the influence of growth method and structure of the multiple quantum wells on the exciton localization and the mechanism. Two achievements are expected from this project. The first is the development of the LO phonon frequency detection into a brand new method in characterizing the strain of quantum wells under luminescence; The second is the realization of a breakthrough in understanding the luminescence mechanism of InGaN quantum wells through systematic research on the influence factor of the exciton localization and its effect on the device performance. Based on these achievements, the optimization of the structure and growth parameters of the quantum wells could be realized.