人工智能技术、物联网、生物检测、可穿戴、智能安防、以及5G等技术的飞速发展对超低功耗集成电路及超灵敏传感器提出了迫切的需求与严峻的挑战，传统器件面临功耗、性能、开关特性等方面的困难。基于二维材料的新型器件的出现，使克服传统器件的困难成为了可能，同时也面临新的机遇与挑战。混合维度范德瓦尔斯异质结TFET器件结合了不同维度材料各自在材料特性、加工工艺等方面的优势，具有巨大潜力，有望在未来超低功耗集成电路和超灵敏传感器中应用。然而，对该器件中混合维度体系的能带结构以及输运特性的相关基础物理问题，目前国内外研究仍十分缺乏。本项目聚焦研究Ge/MoS2范德瓦尔斯混合维度异质结TFET的输运关键技术、器件制备技术与测试技术，拟建立结合能带计算、多散射机制的器件输运模拟平台并进行实验验证。为该器件的设计、优化与制造提供理论指导，推动该器件在超低功耗及超灵敏传感领域的应用。

Abstract：The rapid development of the Artificial Intelligence Technology, Internet of Things, Biological Detection, Wearable, Intelligent Security, and 5G Technology has put forward urgent needs and severe challenges for ultra-low power integrated circuits and ultra-sensitive sensors. Traditional devices are faced with difficulties in power, performance and switching characteristics. Novel devices based on two dimensional materials make it possible to overcome the difficulties of traditional devices. At the same time, new opportunities and challenges have emerged. The Van Der Waals hybrid dimensional heterojunction TFET device combines the advantages of different dimensional materials in material properties and manufacturing technology, respectively. Thus, it has enormous potential and expected to be applied to ultra-low power integrated circuits and ultra-sensitive sensors in the future. However, research of the related fundamental physics problems is still a blank, currently. This project focuses on the key technology of transport, the device manufacture technology and the testing technology of Ge/MoS2 Van Der Waals hybrid dimensional heterojunction TFET. A device transport simulation platform combining energy band calculation and multi scattering mechanism is proposed and verified by experiments. This work provides a theoretical guidance for the designs, optimizes and manufactures of this device, and promotes the application of the device in the field of ultra-low power and ultra-sensitive sensing.