新型功能材料的表界面光电子研究是解决新型太赫兹功能器件关键。在太赫兹波段，研究新型二维薄膜表界面光电子产生的新物理现象和新调控机制仍缺乏理论分析和实验支撑。本项目通过太赫兹发射光谱结合较成熟的二次谐波产生（Second Harmonic Generation，SHG）理论研究过渡金属硫族化物（Transitional Metal Dichalcogenides，TMDs）二维薄膜表界面非线性相关的光电子特性及调控机制：（1）建立SHG与太赫兹发射光谱之间的联系与区别，阐明新型TMDs表界面太赫兹辐射机理，确定辐射机理贡献项，揭示TMDs表界面激子和能谷电子等在太赫兹波段的响应特性；（2）利用电控SHG方法，阐明二阶非线性过程对介电常数和吸收系数等光学参数的调控机理，揭示圆偏振太赫兹辐射机制。本项目实施将为解决新型二维太赫兹功能器件研发的关键问题提供理论基础，推进新型二维太赫兹功能器件发展。

The interfacial optoelectronics in new functional materials play a key role to promote the development of the novel terahertz functional devices. With the development of new two-dimensional materials, the transitional metal dichalcogenides (TMDs) two-dimensional films with excellent optoelectronic properties are expected to be developed into the next generation functional devices. While, optoelectronic detection technology of the new TMDs thin films needs to be improved on basic theories and experimental methods in the terahertz region. In this project, we studied the terahertz radiation mechanism of the new TMDs material by establishing the connection and difference between second-harmonic generation (SHG) and terahertz emission spectroscopy. In addition, we distinguished contributions radiation to understand the property and regulation of the nonlinear interfacial optoelectronics such as exciton and valleytronics. Furthermore, we studied the regulation mechanism of optical parameters associated with second-order nonlinear process such as dielectric constant and absorption coefficient, to explain the mechanism of circular polarization terahertz radiation by electrical controlled SHG method. Finally, the methods will be used to detect the interfacial optoelectronics in new two-dimensional materials to solve the scientific problems and technologies of the novel two-dimensional functional devices in the terahertz region.